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CY7C1062AV33 Datasheet(PDF) 3 Page - Cypress Semiconductor

Part No. CY7C1062AV33
Description  The CY7C1062AV33 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits.
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Maker  CYPRESS [Cypress Semiconductor]
Homepage  http://www.cypress.com
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CY7C1062AV33 Datasheet(HTML) 3 Page - Cypress Semiconductor

   
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CY7C1062AV33
Document #: 38-05137 Rev. *D
Page 3 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°C to +150°C
Ambient Temperature with
Power Applied............................................. –55
°C to +125°C
Supply Voltage on VCC to Relative GND
[1] .... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State[1] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[1] ................................ –0.5V to VCC + 0.5V
Current into Outputs (LOW)......................................... 20 mA
AC Test Loads and Waveforms[3]
Notes:
1.
VIL (min.) = –2.0V for pulse durations of less than 20 ns.
2.
Tested initially and after any design or process changes that may affect these parameters.
3.
Valid SRAM operation does not occur until the power supplies have reached the minimum operating VDD (3.0V). As soon as 1ms (Tpower) after reaching the
minimum operating VDD, normal SRAM operation can begin including reduction in VDD to the data retention (VCCDR, 2.0V) voltage.
Operating Range
Range
Ambient
Temperature
VCC
Commercial
0
°C to +70°C
3.3V
± 0.3V
Industrial
–40
°C to +85°C
DC Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
-8
-10
-12
Unit
Min.
Max.
Min.
Max.
Min.
Max.
VOH
Output HIGH Voltage
VCC = Min.,
IOH = –4.0 mA
2.4
2.4
2.4
V
VOL
Output LOW Voltage
VCC = Min.,
IOL = 8.0 mA
0.4
0.4
0.4
V
VIH
Input HIGH Voltage
2.0
VCC
+ 0.3
2.0
VCC
+ 0.3
2.0
VCC
+ 0.3
V
VIL
Input LOW Voltage[1]
–0.3
0.8
–0.3
0.8
–0.3
0.8
V
IIX
Input Load Current
GND < VI < VCC
–1+1
–1+1
–1+1
µA
IOZ
Output Leakage Current
GND < VOUT < VCC, Output
Disabled
–1+1
–1+1
–1+1
µA
ICC
VCC Operating
Supply Current
VCC = Max., f = fMAX
= 1/tRC
Com’l
300
275
260
mA
Ind’l
300
275
260
mA
ISB1
Automatic CE
Power-down Current
—TTL Inputs
Max. VCC, CE > VIH
VIN > VIH or
VIN < VIL, f = fMAX
70
70
70
mA
ISB2
Automatic CE
Power-down Current
—CMOS Inputs
Max. VCC,
CE > VCC – 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
Com’l/Ind’l50
50
50
mA
Capacitance[2]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz, VCC = 3.3V
8
pF
COUT
I/O Capacitance
10
pF
90%
10%
3.3V
GND
90%
10%
ALL INPUT PULSES
3.3V
OUTPUT
5 pF
Including
Jig and
Scope
OUTPUT
(a)
(b)
R1 317
167
R2
351
VENIN EQUIVALENT
THÉ
1.73V
Rise time > 1 V/ns
Fall time:
> 1 V/ns
(c)
OUTPUT
50
Z0 = 50Ω
V
TH = 1.5V
30 pF
Including all Components
of Test Equipment


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