SUD50N02-09P-E3 datasheet(1/4 Pages) VISHAY

Part #	SUD50N02-09P-E3

Description	N-Channel 20-V (D-S) 175 Degree Celcious MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFET

D 175_C Junction Temperature

D PWM Optimized for High Efficiency

D 100% Rg Tested

APPLICATIONS

D High-Side Synchronous Buck DC/DC

Conversion

− Desktop

− Server

SUD50N02-09P

Vishay Siliconix

Document Number: 72034

S-41168—Rev. C, 14-Jun-04

www.vishay.com

1

N-Channel 20-V (D-S) 175

_C MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)a

20

0.0095 @ VGS = 10 V

20

0.017 @ VGS = 4.5 V

15

D

G

S

N-Channel MOSFET

TO-252

S

GD

Top View

Drain Connected to Tab

Ordering Information: SUD50N02-09P

SUD50N02-09P—E3 (Lead Free)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Currenta

TA = 25_C

ID

20

Continuous Drain Currenta

TC= 100_C

ID

14

Pulsed Drain Current

IDM

100

A

Continuous Source Current (Diode Conduction)a

IS

4.3

Avalanche Current

L = 0 1 mH

IAS

29

Single Pulse Avalanche Energy

L = 0.1 mH

EAS

42

mJ

Maximum Power Dissipation

TA = 25_C

PD

6.5a

W

Maximum Power Dissipation

TC = 25_C

PD

39.5

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 175

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction to Ambienta

t v 10 sec

R

19

23

Maximum Junction-to-Ambienta

Steady State

RthJA

40

50

_C/W

Maximum Junction-to-Case

RthJC

3.1

3.8

C/W

Notes

a.

Surface Mounted on FR4 Board, t v 10 sec.

b.

Limited by package

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SUD50N02-09P-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

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