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PHP78NQ03LT Datasheet(PDF) 3 Page - NXP Semiconductors |
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PHP78NQ03LT Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 9397 750 15086 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 05 — 9 June 2005 3 of 12 Philips Semiconductors PHP78NQ03LT N-channel TrenchMOS logic level FET Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Normalized continuous drain current as a function of mounting base temperature Tmb =25 °C; IDM is single pulse; VGS =5V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 03aa16 0 40 80 120 0 50 100 150 200 Tmb ( °C) Pder (%) 03aa24 0 40 80 120 0 50 100 150 200 Tmb (°C) Ider (%) P der P tot P tot 25 C ° () ----------------------- 100% × = I der I D I D25 C ° () ------------------- 100% × = 003aaa175 1 10 10 2 10 3 1 10 10 2 VDS (V) ID (A) tp = 10 µs DC 100 ms 10 ms Limit RDSon = VDS / ID 1 ms 100 µs |
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