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EMB20P03V Datasheet(PDF) 2 Page - Excelliance MOS Corp.

Part # EMB20P03V
Description  P?륝hannel Logic Level Enhancement Mode Field Effect Transistor
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Manufacturer  EXCELLIANCE [Excelliance MOS Corp.]
Direct Link  http://www.excelliancemos.com/
Logo EXCELLIANCE - Excelliance MOS Corp.

EMB20P03V Datasheet(HTML) 2 Page - Excelliance MOS Corp.

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2013/9/18 
p.2 
EMB20P03V
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) 
PARAMETER 
SYMBOL
TEST CONDITIONS 
LIMITS 
UNIT
MIN  TYP
MAX
STATIC 
Drain‐Source Breakdown Voltage 
V(BR)DSS 
VGS = 0V, I= ‐250A 
‐30  
 
Gate Threshold Voltage 
VGS(th) 
VDS = VGS, ID = ‐250A 
‐1 ‐1.5
‐3 
Gate‐Body Leakage 
IGSS 
VDS = 0V, VGS = ±20V  
 
±100
nA
VDS = 0V, VGS = ±25V  
 
±500
Zero Gate Voltage Drain Current 
IDSS 
VDS = ‐24V, VGS = 0V  
 
‐1 
A
VDS = ‐20V, VGS = 0V, TJ = 125 °C  
 
‐10 
On‐State Drain Current
1 
ID(ON) 
VDS = ‐5V, VGS = ‐10V ‐18  
 
Drain‐Source On‐State Resistance
1 
RDS(ON) 
VGS = ‐10V, ID = ‐10A  
17.5
20 
VGS = ‐4.5V, ID = ‐7A  
26
35 
Forward Transconductance
1 
gfs 
VDS = ‐5V, ID = ‐10A  
24
 
DYNAMIC 
Input Capacitance 
Ciss  
VGS = 0V, VDS = ‐15V, f = 1MHz 
 
1407
 
pF
Output Capacitance 
Coss  
208
 
Reverse Transfer Capacitance  
Crss  
164
 
Gate Resistance 
Rg 
VGS = 15mV, VDS = 0V, f = 1MHz  
4.5
 Ω 
Total Gate Charge
1,2 
Qg(VGS=10V)
 
VDS = ‐15V, VGS = ‐10V, 
ID = ‐10A 
 
20.3
 
nC
Qg(VGS=4.5V)
 
9.8
 
Gate‐Source Charge
1,2 
Qgs  
3.2
 
Gate‐Drain Charge
1,2 
Qgd  
4.9
 
Turn‐On Delay Time
1,2 
td(on)  
 
10
 
nS
Rise Time
1,2 
tr 
VDS = ‐15V,  
 
8  
Turn‐Off Delay Time
1,2 
td(off) 
ID = ‐1A, VGS = ‐10V, RGS = 2.7Ω 
 
25
 
Fall Time
1,2 
tf  
 
6  
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) 
Continuous Current 
IS  
 
 
‐3.5
Pulsed Current
3 
ISM  
 
 
‐14 
Forward Voltage
1 
VSD 
IF = IS A, VGS = 0V  
 
‐1.2
Reverse Recovery Time  
trr 
IF = IS, dlF/dt = 100A / S 
 
32
 
nS
Reverse Recovery Charge 
Qrr  
 
26
 
nC


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