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K9F1G08U0E Datasheet(PDF) 25 Page - Samsung semiconductor

Part No. K9F1G08U0E
Description  1Gb E-die NAND Flash
Download  38 Pages
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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K9F1G08U0E Datasheet(HTML) 25 Page - Samsung semiconductor

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K9F1G08U0E
FLASH MEMORY
Rev. 1.11
SAMSUNG CONFIDENTIAL
4.8 Page Program Operation
NOTE :
tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
m = 2112byte
CE
CLE
R/B
WE
ALE
RE
80h
70h
I/O0
Din
N
Din
10h
M
SerialData
Input Command
Column Address
Row Address
1 up to m Byte
Serial Input
Program
Command
Read Status
Command
I/O0=0 Successful Program
I/O0=1 Error in Program
tPROG
tWB
tWC
tWC
tWC
I/Ox
Co.l Add1
Col. Add2
Row Add1
Row Add2
tADL
tWHR


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