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K9F1G08U0E Datasheet(PDF) 19 Page - Samsung semiconductor

Part # K9F1G08U0E
Description  1Gb E-die NAND Flash
Download  38 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9F1G08U0E Datasheet(HTML) 19 Page - Samsung semiconductor

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datasheet
K9F1G08U0E
FLASH MEMORY
Rev. 1.11
SAMSUNG CONFIDENTIAL
4.0 SYSTEM INTERFACE USING CE DON’T-CARE.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte data registers are
utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or audio applications which use slow cycle
time on the orde
[Figure 4] Program Operation with CE don’t-care.
[Figure 5] Read Operation with CE don’t-care.
Address Information
Device
I/O
DATA
ADDRESS
I/Ox
Data In/Out
Col. Add1
Col. Add2
Row Add1
Row Add2
K9F1G08U0E
I/O 0 ~ I/O 7
~2112byte
A0~A7
A8~A11
A12~A19
A20~A27
CE
WE
tWP
tCH
tCS
Address(4Cycles)
80h
Data Input
CE
CLE
ALE
WE
Data Input
CE don’t-care
10h
tCEA
out
tREA
CE
RE
I/O0~7
I/Ox
Address(4Cycle)
00h
CE
CLE
ALE
WE
Data Output(serial access)
CE don’t-care
R/B
t
RE
30h
I/Ox


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