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K9F1G08U0E Datasheet(PDF) 13 Page - Samsung semiconductor

Part No. K9F1G08U0E
Description  1Gb E-die NAND Flash
Download  38 Pages
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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K9F1G08U0E Datasheet(HTML) 13 Page - Samsung semiconductor

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K9F1G08U0E
FLASH MEMORY
Rev. 1.11
SAMSUNG CONFIDENTIAL
2.8 Program / Erase Characteristics
NOTE :
1) Typical value is measured at Vcc=3.3V, TA=25
C. Not 100% tested.
2) Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 3.3V Vcc and 25
C temperature.
2.9 AC Timing Characteristics for Command / Address / Data Input
NOTE :
1) The transition of the corresponding control pins must occur only once while WE is held low
2) tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
tPROG
-
400
900
s
Number of Partial Program Cycles
Nop
-
-
1
cycles
Block Erase Time
tBERS
-4.5
16
ms
Parameter
Symbol
Min
Max
Unit
CLE Setup Time
tCLS(1)
12
-
ns
CLE Hold Time
tCLH
5-
ns
CE Setup Time
tCS(1)
20
-
ns
CE Hold Time
tCH
5-
ns
WE Pulse Width
tWP
12
-
ns
ALE Setup Time
tALS(1)
12
-
ns
ALE Hold Time
tALH
5-
ns
Data Setup Time
tDS(1)
12
-
ns
Data Hold Time
tDH
5-
ns
Write Cycle Time
tWC
25
-
ns
WE High Hold Time
tWH
10
-
ns
Address to Data Loading Time
tADL(2)
100
-
ns


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