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K9F1G08U0E Datasheet(PDF) 9 Page - Samsung semiconductor

Part No. K9F1G08U0E
Description  1Gb E-die NAND Flash
Download  38 Pages
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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K9F1G08U0E Datasheet(HTML) 9 Page - Samsung semiconductor

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K9F1G08U0E
FLASH MEMORY
Rev. 1.11
SAMSUNG CONFIDENTIAL
[Figure 1] K9F1G08U0E Functional Block Diagram
[Figure 2] K9F1G08U0E Array Organization
NOTE :
Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than required.
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
2nd Cycle
A8
A9
A10
A11
*L
*L
*L
*L
3rd Cycle
A12
A13
A14
A15
A16
A17
A18
A19
4th Cycle
A20
A21
A22
A23
A24
A25
A26
A27
VCC
X-Buffers
Command
I/O Buffers & Latches
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Register
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
VSS
A12 - A27
A0 - A11
Command
CE
RE
WE
CLE
WP
I/0 0
I/0 7
VCC
VSS
ALE
1,024M + 32M Bit
NAND Flash
ARRAY
(2,048 + 64)Byte x 65,536
Y-Gating
Data Register & S/A
2K Bytes
64 Bytes
64K Pages
(=1,024 Blocks)
2K Bytes
8 bit
64 Bytes
1 Block = 64 Pages
(128K + 4k) Byte
I/O 0 ~ I/O 7
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
= (128K + 4K) Bytes
1 Device = (2K+64)B x 64Pages x 1,024 Blocks
= 1,056 Mbits
Page Register
Row Address
Row Address
Column Address
Column Address


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