Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

K9F1G08U0E Datasheet(PDF) 4 Page - Samsung semiconductor

Part No. K9F1G08U0E
Description  1Gb E-die NAND Flash
Download  38 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo 

K9F1G08U0E Datasheet(HTML) 4 Page - Samsung semiconductor

 
Zoom Inzoom in Zoom Outzoom out
 4 / 38 page
background image
- 4 -
datasheet
K9F1G08U0E
FLASH MEMORY
Rev. 1.11
SAMSUNG CONFIDENTIAL
1.0 INTRODUCTION
1.1 General Description
1.2 Features
1.3 General Description
Offered in 128Mx8bit, the K9F1G08U0E is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost-effective solution for
the solid state application market. A program operation can be performed in typical 400
s on the (2K+64)Byte page and an erase operation can be per-
formed in typical 4.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports
for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse rep-
etition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1G08U0E
s
extended reliability by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08U0E is an optimum solution for large
nonvolatile storage applications such as solid state file storage and other portable app.lications requiring non-volatility.
Part Number
Vcc Range
Organization
PKG Type
K9F1G08U0E-S
2.7V ~ 3.6V
x8
TSOP1
K9F1G08U0E-B
2.7V ~ 3.6V
x8
63FBGA
 Voltage Supply
- 3.3V Device(K9F1G08U0E) : 2.7V ~ 3.6V
 Organization
- Memory Cell Array : (128M + 4M) x 8bit
- Data Register : (2K + 64) x 8bit
 Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
 Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 40
s(Max.)
- Serial Access : 25ns(Min.)
 Fast Write Cycle Time
- Page Program time : 400
s(Typ.)
- Block Erase Time : 4.5ms(Typ.)
 Command/Address/Data Multiplexed I/O Port
 Hardware Data Protection
- Program/Erase Lockout During Power Transitions
 Reliable CMOS Floating-Gate Technology
-Endurance & Data Retention : Refor to the gualification report
-ECC regnirement : 1 bit / 528bytes
 Command Driven Operation
 Unique ID for Copyright Protection
 Package :
- K9F1G08U0E-SCB0/SIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1G08U0E-BCB0/BIB0 : Pb-FREE PACKAGE
63 FBGA (9 x 11 / 0.8 mm pitch)


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29  30  31  32  33  34  35  36  37  38 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn