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K9F1G08U0E Datasheet(PDF) 35 Page - Samsung semiconductor

Part No. K9F1G08U0E
Description  1Gb E-die NAND Flash
Download  38 Pages
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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K9F1G08U0E Datasheet(HTML) 35 Page - Samsung semiconductor

 
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K9F1G08U0E
FLASH MEMORY
Rev. 1.11
SAMSUNG CONFIDENTIAL
5.4 Block Erase
The Erase operation is done on a block basis. Block address loading is accomplished in two cycles initiated by an Erase Setup command(60h). Only
address A18 to A27 is valid while A12 to A17 is ignored. The Erase Confirm command(D0h) following the block address loading initiates the internal erasing
process. This two-step sequence of setup followed by execution command ensures that memory contents are not accidentally erased due to external
noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When the erase operation is
completed, the Write Status Bit(I/O 0) may be checked. Figure 12 details the sequence.
[Figure 12] Block Erase Operation
5.5 Read Status
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether the program or erase
operation is completed successfully. After writing 70h command to the command register, a read cycle outputs the content of the Status Register to the I/
O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows the system to poll the progress of each device in multiple mem-
ory connections even when R/B pins are common-wired. RE or CE does not need to be toggled for updated status. Refer to Table 2 for specific Status
Register definitions. The command register remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read
during a random read cycle, the read command(00h) should be given before starting read cycles.
[Table 2] Status Register Definition for 70h Command
NOTE :
I/Os defined ’Not use’ are recommended to be masked out when Read Status is being executed.
I/O
Page Program
Block Erase
Read
Definition
I/O 0
Pass/Fail
Pass/Fail
Not use
Pass : "0"
Fail : "1"
I/O 1
Not use
Not use
Not use
Don’t -cared
I/O 2
Not use
Not use
Not use
Don’t -cared
I/O 3
Not Use
Not Use
Not Use
Don’t -cared
I/O 4
Not Use
Not Use
Not Use
Don’t -cared
I/O 5
Not Use
Not Use
Not Use
Don’t -cared
I/O 6
Ready/Busy
Ready/Busy
Ready/Busy
Busy : "0"
Ready : "1"
I/O 7
Write Protect
Write Protect
Write Protect
Protected : "0"
Not Protected : "1"
60h
Row Add 1,2
R/B
Address Input(2Cycle)
I/O0
Pass
D0h
70h
Fail
tBERS
I/Ox
"0"
"1"


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