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K9F1G08U0E Datasheet(PDF) 33 Page - Samsung semiconductor

Part No. K9F1G08U0E
Description  1Gb E-die NAND Flash
Download  38 Pages
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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K9F1G08U0E Datasheet(HTML) 33 Page - Samsung semiconductor

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K9F1G08U0E
FLASH MEMORY
Rev. 1.11
SAMSUNG CONFIDENTIAL
[Figure 7] Random Data Output In a Page
5.2 Page Program
The device is programmed basically on a page basis, and each page shall be programmed only once before being erased.
The addressing should be done in sequential order in a block. A page program cycle consists of a serial data loading period in which up to 2,112bytes of
data may be loaded into the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the four cycle address inputs and then serial data
loading. The words other than those to be programmed do not need to be loaded. The device supports random data input in a page. The column address
for the next data, which will be entered, may be changed to the address which follows random data input command(85h). Random data input may be
operated multiple times regardless of how many times it is done in a page. The Page Program confirm command(10h) initiates the programming process.
Writing 10h alone without previously entering the serial data will not initiate the programming process. The internal write state controller automatically exe-
cutes the algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts,
the Read Status Register command may be entered to read the status register. The system controller can detect the completion of a program cycle by
monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while program-
ming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 8). The internal write verify detects only
errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status command mode until another valid command
is written to the command register.
[Figure 8] Program & Read Status Operation
Address
00h
Data Output
R/B
RE
t
30h
Address
05h
E0h
4Cycles
2Cycles
Data Output
Data Field
Spare Field
Data Field
Spare Field
I/Ox
Col. Add.1,2 & Row Add.1,2
Col. Add.1,2
80h
R/B
Address & Data Input
I/O0
Pass
Data
10h
70h
Fail
tPROG
I/Ox
Col. Add.1,2 & Row Add.1,2
"0"
"1"


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