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K9F1G08U0E Datasheet(PDF) 29 Page - Samsung semiconductor

Part No. K9F1G08U0E
Description  1Gb E-die NAND Flash
Download  38 Pages
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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K9F1G08U0E Datasheet(HTML) 29 Page - Samsung semiconductor

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K9F1G08U0E
FLASH MEMORY
Rev. 1.11
SAMSUNG CONFIDENTIAL
4.12 Block Erase Operation
CE
CLE
R/B
WE
ALE
RE
60h
Erase Command
Read Status
Command
I/O0=1 Error in Erase
D0h
70h
I/O 0
Busy
tWB
tBERS
I/O0=0 Successful Erase
Row Address
tWC
Auto Block Erase
Setup Command
I/Ox
Row Add1
Row Add2
tWHR
4.13 Read ID Operation
Device
Device Code (2nd Cycle)
3rd Cycle
4th Cycle
5th Cycle
K9F1G08U0E
F1h
00h
95h
41h
CE
CLE
WE
ALE
RE
90h
Read ID Command
Maker Code Device Code
00h
ECh
tREA
Address 1cycle
I/Ox
tAR
Device
4th cyc.
Code
3rd cyc.
5th cyc.


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