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WNM6001 Datasheet(PDF) 2 Page - Will Semiconductor Ltd.

Part No. WNM6001
Description  Single N-Channel, 60V, 0.50A, Power MOSFET
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Maker  WILLSEMI [Will Semiconductor Ltd.]
Homepage  http://www.willsemi.com/index.php?siteid=2
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WNM6001 Datasheet(HTML) 2 Page - Will Semiconductor Ltd.

   
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WNM6001
Will Semiconductor Ltd.
2
Absolute Maximum ratings
Thermal resistance ratings
a
Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b
Surface mounted on FR-4 board using minimum pad size, 1oz copper
c
Pulse width<380µs
d
Maximum junction temperature TJ=150°C.
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
Continuous Drain Current
ad
TA=25°C
ID
0.50
0.44
A
TA=70°C
0.40
0.35
Maximum Power Dissipation
ad
TA=25°C
PD
0.69
0.53
W
TA=70°C
0.44
0.34
Continuous Drain Current
bd
TA=25°C
ID
0.47
0.42
A
TA=70°C
0.38
0.33
Maximum Power Dissipation
bd
TA=25°C
PD
0.60
0.47
W
TA=70°C
0.39
0.30
Pulsed Drain Current
c
IDM
1.0
A
Operating Junction Temperature
TJ
-55 to 150
°C
Lead Temperature
TL
260
°C
Storage Temperature Range
Tstg
-55 to 150
°C
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient Thermal Resistance
a
t ≤ 10 s
RθJA
140
180
°C/W
Steady State
176
232
Junction-to-Ambient Thermal Resistance
b
t ≤ 10 s
RθJA
165
205
Steady State
198
261
Junction-to-Case Thermal Resistance
Steady State
RθJC
100
120
Mar, 2018 - Rev.1.1


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