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WNM6001 Datasheet(PDF) 3 Page - Will Semiconductor Ltd.

Part No. WNM6001
Description  Single N-Channel, 60V, 0.50A, Power MOSFET
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Maker  WILLSEMI [Will Semiconductor Ltd.]
Homepage  http://www.willsemi.com/index.php?siteid=2
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WNM6001 Datasheet(HTML) 3 Page - Will Semiconductor Ltd.

   
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WNM6001
Will Semiconductor Ltd.
3
Electronics Characteristics (Ta=25
oC, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250uA
60
V
Zero Gate Voltage Drain Current
IDSS
VDS =60V, VGS = 0V
1
uA
Gate-to-source Leakage Current
IGSS
VDS = 0 V, VGS =±20V
±5
uA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250uA
0.8
1.3
2
V
Drain-to-source On-resistance
b, c
RDS(on)
VGS = 10V, ID = 0.5 A
1.4
2.0
VGS = 4.5V, ID = 0.2A
1.7
2.6
Forward Transconductance
gFS
VDS =15V, ID =0.25A
0.42
S
CAPACITANCES,
CHARGES
Input Capacitance
CISS
VGS = 0 V,
f = 1.0 MHz,
VDS = 25V
23.37
pF
Output Capacitance
COSS
7.33
Reverse Transfer Capacitance
CRSS
5.2
Total Gate Charge
QG(TOT)
VGS = 10 V,
VDD = 30 V,
ID =0.37A
1.2
nC
Threshold Gate Charge
QG(TH)
0.15
Gate-to-Source Charge
QGS
0.21
Gate-to-Drain Charge
QGD
0.12
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
VDD=30V, ID=0.2A,
VGEN=10V,RG=10 Ω
ns
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD
VGS = 0 V, IS =0.3A
0.9
1.5
V
7.6
5.1
24.6
10
Mar, 2018 - Rev.1.1


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