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NLSX4378ABFCT1G Datasheet(PDF) 6 Page - ON Semiconductor

Part No. NLSX4378ABFCT1G
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NLSX4378ABFCT1G Datasheet(HTML) 6 Page - ON Semiconductor

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TIMING CHARACTERISTICS − RAIL−TO−RAIL DRIVING CONFIGURATIONS
(I/O test circuit of Figures 2 and 3, CLOAD = 15 pF, driver output impedance v 50 W, RLOAD = 1 MW)
Symbol
Unit
−55
5C to +1255C
(Note 3)
−40
5C to +855C
(Note 3)
Test Conditions
Parameter
Symbol
Unit
Max
Min
Max
Typ
Min
Test Conditions
Parameter
VL = 3.6 V, VCC = 2.5 V
tRVCC
I/O VCC Risetime
15
15
ns
tFVCC
I/O VCC Falltime
10
10
ns
tRVL
I/O VL Risetime
15
15
ns
tFVL
I/O VL Falltime
10
10
ns
tPDVL−VCC
Propagation Delay (Driving I/O VL)
15
15
ns
tPDVCC−VL
Propagation Delay (Driving I/O VCC)
15
15
ns
tSKEW
Channel−to−Channel Skew
5
5
nS
MDR
Maximum Data Rate
24
24
Mb/s
VL = 5.5 V, VCC = 1.65 V
tRVCC
I/O VCC Risetime
30
30
ns
tFVCC
I/O VCC Falltime
10
10
ns
tRVL
I/O VL Risetime
15
15
ns
tFVL
I/O VL Falltime
30
30
ns
tPDVL−VCC
Propagation Delay (Driving I/O VL)
20
20
ns
tPDVCC−VL
Propagation Delay (Driving I/O VCC)
20
20
ns
tSKEW
Channel−to−Channel Skew
5
5
nS
MDR
Maximum Data Rate
24
24
Mb/s
3. Limits over the operating temperature range are guaranteed by design.
TIMING CHARACTERISTICS − OPEN DRAIN DRIVING CONFIGURATIONS
(I/O test circuit of Figures 4 and 5, CLOAD = 15 pF, driver output impedance v 50 W, RLOAD = 1 MW)
Symbol
Parameter
Test Conditions
−40
5C to +855C
(Note 4)
−55
5C to +1255C
(Note 4)
Unit
Min
Typ
Max
Min
Max
+1.65
v VL, VCC v +5.5 V
tRVCC
I/O VCC Risetime
400
400
ns
tFVCC
I/O VCC Falltime
50
50
ns
tRVL
I/O VL Risetime
400
400
ns
tFVL
I/O VL Falltime
60
60
ns
tPDVL−VCC
Propagation Delay (Driving I/O VL)
1000
1000
ns
tPDVCC−VL
Propagation Delay (Driving I/O VCC)
1000
1000
ns
tSKEW
Channel−to−Channel Skew
50
50
nS
MDR
Maximum Data Rate
2
2
Mb/s
4. Limits over the operating temperature range are guaranteed by design.


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