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UPA2503 Datasheet(PDF) 2 Page - NEC

Part No. UPA2503
Description  N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

UPA2503 Datasheet(HTML) 2 Page - NEC

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Data Sheet G16682EJ1V0DS
2
µ PA2503
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 30.0 V, VGS = 0 V
1.0
µA
Gate Leakage Current
IGSS
VGS = ±18.0 V, VDS = 0 V
±10.0
µA
Gate Cut-off Voltage
VGS(off)
VDS = 10.0 V, ID = 1.0 mA
1.5
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10.0 V, ID = 8.0 A
5
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10.0 V, ID = 8.0 A
7.5
9.5
m
RDS(on)2
VGS = 4.5 V, ID = 8.0 A
11.0
15.1
m
Input Capacitance
Ciss
VDS = 10.0 V
1200
pF
Output Capacitance
Coss
VGS = 0 V
320
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
190
pF
Turn-on Delay Time
td(on)
VDD = 15.0 V, ID = 8.0 A
12
ns
Rise Time
tr
VGS = 10.0 V
17
ns
Turn-off Delay Time
td(off)
RG = 10
52
ns
Fall Time
tf
15
ns
Total Gate Charge
QG
VDD = 15.0 V
15
nC
Gate to Source Charge
QGS
VGS = 5.0 V
4
nC
Gate to Drain Charge
QGD
ID = 16.0 A
7
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 16.0 A, VGS = 0 V
0.84
V
Reverse Recovery Time
trr
IF = 16.0 A, VGS = 0 V
28
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
µs
18
nC
Note Pulsed: PW
≤ 350
µs, Duty Cycle ≤ 2%
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
0
90%
90%
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
10%
µ


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