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UPA2502 Datasheet(PDF) 1 Page - NEC

Part No. UPA2502
Description  N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
Logo NEC - NEC

UPA2502 Datasheet(HTML) 1 Page - NEC

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
µ PA2502
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16681EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The
µ PA2502, which has a heat spreader, is N-channel
MOS Field Effect Transistor designed for DC/DC converter
and power management applications of notebook computers.
FEATURES
µ PA2502 has a thin surface mount package with a heat
spreader. The land size is same as 8-pin TSSOP.
• Low on-state resistance
RDS(on)1 = 12.0 m
Ω MAX. (VGS = 10.0 V, ID = 7.0 A)
RDS(on)2 = 18.0 m
Ω MAX. (VGS = 4.5 V, ID = 7.0 A)
• Low Ciss: 760 pF TYP. (VDS = 10.0 V, VGS = 0 V)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA2502TM
8PIN HWSON
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30.0
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20.0
V
Drain Current (DC)
Note1
ID(DC)
±13.0
A
Drain Current (pulse)
Note2
ID(pulse)
±52.0
A
Total Power Dissipation
Note1
PT
2.7
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Single Avalanche Current
Note3
IAS
13.0
A
Single Avalanche Energy
Note3
EAS
16.9
mJ
Notes 1. Mounted on FR-4 board of 25 cm
2 x 1.6 mm, PW ≤ 10 sec
2. PW
≤ 10
µs, Duty Cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 15.0 V, RG = 25
Ω, VGS = 20.0 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1
2
3
4
8
7
6
5
6.4
±0.1
5.8
±0.1
4.15
±0.2
0.85
±0.15
0.75
±0.15
0.10 S
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain


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