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UPA1873 Datasheet(PDF) 1 Page - NEC

Part No. UPA1873
Description  N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
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UPA1873 Datasheet(HTML) 1 Page - NEC

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©
2001
MOS FIELD EFFECT TRANSISTOR
µµµµPA1873
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
G15629EJ1V0DS00 (1st edition)
Date Published
December 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The
µPA1873 is a switching device which can be
driven directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 23.0 m
Ω MAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 24.0 m
Ω MAX. (VGS = 4.0 V, ID = 3.0 A)
RDS(on)3 = 28.0 m
Ω MAX. (VGS = 3.1 V, ID = 3.0 A)
RDS(on)4 = 29.0 m
Ω MAX. (VGS = 2.5 V, ID = 3.0 A)
• Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1873GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
Drain Current (DC) (TA = 25°C)
ID(DC)
±6.0
A
Drain Current (pulse)
Note1
ID(pulse)
±80
A
Total Power Dissipation (2 unit)
Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Notes 1. PW
≤ 10
µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 5000 mm
2 x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
14
85
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.1
1
: Drain1
2, 3
: Source1
4
: Gate1
5
: Gate2
6, 7
: Source2
8
: Drain2
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
–0.08
0.25
0.5
3
°+5°
–3
°
0.6
+0.15
–0.1
1.2 MAX.
0.1±0.05
1.0±0.05
EQUIVALENT CIRCUIT
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1


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