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UPA1872B Datasheet(PDF) 2 Page - NEC

Part No. UPA1872B
Description  N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

UPA1872B Datasheet(HTML) 2 Page - NEC

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Data Sheet G16742EJ1V0DS
2
µ PA1872B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 20.0 V, VGS = 0 V
1.0
µA
Gate Leakage Current
IGSS
VGS = ±12.0 V, VDS = 0 V
±10.0
µA
Gate Cut-off Voltage
VGS(off)
VDS = 10.0 V, ID = 1.0 mA
0.50
1.00
1.50
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10.0 V, ID = 5.0 A
5
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 4.5 V, ID = 5.0 A
8.0
10.0
13.0
m
RDS(on)2
VGS = 4.0 V, ID = 5.0 A
8.5
10.5
13.5
m
RDS(on)3
VGS = 3.1 V, ID = 5.0 A
9.0
11.0
15.5
m
RDS(on)4
VGS = 2.5 V, ID = 5.0 A
10.0
13.0
18.0
m
Input Capacitance
Ciss
VDS = 10.0 V
945
pF
Output Capacitance
Coss
VGS = 0 V
220
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
160
pF
Turn-on Delay Time
td(on)
VDD = 10.0 V, ID = 5.0 A
47
ns
Rise Time
tr
VGS = 4.0 V
315
ns
Turn-off Delay Time
td(off)
RG = 10
255
ns
Fall Time
tf
330
ns
Total Gate Charge
QG
VDD = 16.0 V
10.0
nC
Gate to Source Charge
QGS
VGS = 4.0 V
2.5
nC
Gate to Drain Charge
QGD
ID = 10.0 A
4.5
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 10.0 A, VGS = 0 V
0.83
V
Reverse Recovery Time
trr
IF = 10.0 A, VGS = 0 V
240
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/
µs
220
nC
Note Pulsed: PW
≤ 350
µs, Duty Cycle ≤ 2%
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
µ
Duty Cycle
≤ 1%
τ
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
0
90%
90%
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
10%


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