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UPA1807 Datasheet(PDF) 1 Page - NEC

Part No. UPA1807
Description  N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
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UPA1807 Datasheet(HTML) 1 Page - NEC

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
MOS FIELD EFFECT TRANSISTOR
µµµµPA1807
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16249EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
©
2002
DESCRIPTION
The
µPA1807 is a switching device, which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as DC/DC converters and power
management of notebook computers and so on.
FEATURES
• 4.0 V drive available
• Low on-state resistance
RDS(on)1 = 10 m
Ω MAX. (VGS = 10 V, ID = 6.0 A)
RDS(on)2 = 14 m
Ω MAX. (VGS = 4.5 V, ID = 6.0 A)
RDS(on)3 = 16 m
Ω MAX. (VGS = 4.0 V, ID = 6.0 A)
• Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1807GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TA = 25°C)
ID(DC)
±12
A
Drain Current (pulse)
Note1
ID(pulse)
±48
A
Total Power Dissipation
Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Notes 1. PW
≤ 10
µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 5000 mm
2 x 1.1 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
14
85
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.1
1, 2, 3
: Source
4
: Gate
5, 6, 7, 8: Drain
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
–0.08
0.25
0.5
3
°+5°
–3
°
0.6
+0.15
–0.1
1.2 MAX.
0.1 ±0.05
1.0 ±0.05
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain


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