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CE1N2R Datasheet(PDF) 2 Page - NEC |
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CE1N2R Datasheet(HTML) 2 Page - NEC |
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Data Sheet D10846EJ2V0DS 2 CE1N2R ELECTRICAL CHARACTERISTICS (Ta = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Colletor to emitter voltage VCEO(SUS) IC = 2.0 A, IB = 5.0 mA, L = 6.0 mH 50 60 V Collector cutoff current ICBO VCB = 40 V, IE = 0 100 nA DC current gain hFE1 ** VCE = 5.0 V, IC = 0.2 A 700 1200 − DC current gain hFE2 ** VCE = 5.0 V, IC = 1.0 A 1000 1700 3000 − DC current gain hFE3 ** VCE = 5.0 V, IC = 2.0 A 500 1300 − Low level output voltage VOL ** VI = 5.0 V, IC = 0.5 A 0.12 0.3 V Low level input voltage VIL ** VCE = 12 V, IC = 100 µA 0.43 0.4 V Input resistance R1 476 680 884 Ω E-to-B resistance R2 7.0 10.0 13.0 k Ω Turn-on time ton 0.4 µs Storage time tstg 1.4 µs Fall time tf IC = 1.0 A IBI = −IB2 = 10 mA VCC = 20 V, RL = 20 Ω 0.5 µs ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 % RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact an NEC sales representative. |
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