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2SK3458 Datasheet(PDF) 1 Page - NEC |
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2SK3458 Datasheet(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 2000 MOS FIELD EFFECT TRANSISTOR 2SK3458 SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D14755EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 3.0 A) • Avalanche capability ratings • Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 800 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±6.0 A Drain Current (pulse) Note1 ID(pulse) ±24 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 100 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 6.0 A Single Avalanche Energy Note2 EAS 66.5 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 ¡ 0 V ORDERING INFORMATION PART NUMBER PACKAGE 2SK3458 TO-220AB 2SK3458-S TO-262 2SK3458-ZK TO-263 |
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