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2SK3114 Datasheet(PDF) 6 Page - NEC |
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2SK3114 Datasheet(HTML) 6 Page - NEC |
6 / 8 page Data Sheet D13337EJ2V0DS 6 2SK3114 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 m 1m 10m 100 L - Inductive Load - H 1.0 10 0.1 10 m RG = 25 W VDD = 150 V VGS = 20 ® 0 V Starting Tch = 25˚C E AS = 10.7 mJ IAS = 4 A PACKAGE DRAWINGS (Unit: mm) Isolated TO-220 (MP-45F) 1.Gate 2.Drain 3.Source 10.0±0.3 3.2±0.2 φ 0.7±0.1 1.3±0.2 1.5±0.2 2.54 TYP. 2.54 TYP. 123 2.5±0.1 0.65±0.1 4.5±0.2 2.7±0.2 SINGLE AVALANCHE ENERGY DERATING FACTOR 75 150 125 120 80 40 0 Starting Tch - Starting Channel Temperature - ˚C 50 100 25 VDD = 150 V RG = 25 W VGS = 20 ® 0 V IAS £ 4 A 100 60 20 EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. |
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