2SK3112-S datasheet(1/8 Pages) NEC

Part #	2SK3112-S

Description	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

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©

1998,2001

MOS FIELD EFFECT TRANSISTOR

2SK3112

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

Document No. D13335EJ1V0DS00 (1st edition)

Date Published May 2001 NS CP (K)

Printed in Japan

DATA SHEET

DESCRIPTION

The 2SK3112 is N-channel MOS FET device that features a

low on-state resistance and excellent switching characteristics,

and designed for high voltage applications such as DC/DC

converter, actuator driver.

FEATURES

• Gate voltage rating ±30 V

• Low on-state resistance

RDS(on) = 110 m

Ω MAX. (VGS = 10 V, ID = 13 A)

• Low input capacitance

Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V)

• Avalanche capability rated

• Built-in gate protection diode

• Surface mount device available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

200

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±30

V

Drain Current (DC) (TC = 25°C)

ID(DC)

±25

A

Drain Current (pulse)

Note1

ID(pulse)

±75

A

Total Power Dissipation (TC = 25°C)

PT1

100

W

Total Power Dissipation (TA = 25°C)

PT2

1.5

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Single Avalanche Current

Note2

IAS

25

A

Single Avalanche Energy

Note2

EAS

250

mJ

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 100 V, RG = 25

Ω, VGS = 20 V→0 V

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3112

TO-220AB

2SK3112-S

TO-262

2SK3112-ZJ

TO-263(MP-25ZJ)

(TO-220AB)

(TO-262)

(TO-263)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

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