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2SC4814 Datasheet(PDF) 1 Page - NEC |
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2SC4814 Datasheet(HTML) 1 Page - NEC |
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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. 1998 © Document No. D15604EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan SILICON POWER TRANSISTOR 2SC4814 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DATA SHEET 2002 The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for high- precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for solenoid driving in automotive equipment. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES • Low VCE(sat): VCE(sat) ≤ 0.3 V @IC = 1.5 A, IB = 10 mA • High hFE: hFE = 300 to 1,200 @VCE = 2.0 V, IC = 1.0 A • On-chip dumper-diode • Auto-mounting possible in radial taping specifications ABSOLUTE MAXIMUM RATINGS (Ta = 25 °°°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) ±2.5 A Collector current (pulse) IC(pulse) PW ≤ 300 µs, duty cycle ≤ 10% ±5.0 A Base current (DC) IB(DC) 1.0 A Total power dissipation PT Ta = 25 °C 1.8 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C |
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