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2SC4814 Datasheet(PDF) 1 Page - NEC

Part No. 2SC4814
Description  NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
Logo NEC - NEC

2SC4814 Datasheet(HTML) 1 Page - NEC

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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
©
Document No. D15604EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4814
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for high-
precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for
solenoid driving in automotive equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Low VCE(sat): VCE(sat)
≤ 0.3 V
@IC = 1.5 A, IB = 10 mA
• High hFE:
hFE = 300 to 1,200 @VCE = 2.0 V, IC = 1.0 A
• On-chip dumper-diode
• Auto-mounting possible in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
120
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
±2.5
A
Collector current (pulse)
IC(pulse)
PW
≤ 300
µs, duty cycle ≤ 10%
±5.0
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation
PT
Ta = 25
°C
1.8
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C


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