VN2010L datasheet(4/4 Pages) TEMIC

Part #	VN2010L

Description	N-Channel Enhancement-Mode MOS Transistors

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Manufacturer	TEMIC [TEMIC Semiconductors]

Direct Link	http://www.temic.de

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VN2010L/BS107

Siliconix

P-38283—

Rev. B (08/15/94)

4

Typical Characteristics (25_C Unless Otherwise Noted) (Cont'd)

Threshold Region

Capacitance

Normalized Effective Transient Thermal Impedance, JunctiontoAmbient (TO 226AA)

Gate Charge

Load Condition Effects on Switching

t1 - Square Wave Pulse Duration (sec)

ID - Drain Current (A)

VDS - DraintoSource Voltage (V)

VGS - GatetoSource Voltage (V)

Qg - Total Gate Charge (pC)

10

1

0.01

0

0.4

0.1

0.8

1.2

1.6

2.0

VDS = 5 V

TJ = 150°C

-55°C

0°C

60

50

40

0

010

50

30

20

30

40

10

Coss

Ciss

Crss

VGS = 0 V

f = 1 MHz

15.0

12.5

10.0

0

250

1250

7.5

5.0

500

750

1000

2.5

I D = 0.1 A

160 V

VDS = 100 V

0.01

0.1

1.0

100

10

1

50

20

5

2

VDD = 25 V

RG = 25 W

VGS = 0 to 10 V

10 K

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

1

0.01

0.1

0.01

0.1

1

100

10

1 K

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 156_C/W

3. TJM - TA = PDMZthJA(t)

t1

t2

t1

Notes:

PDM

t2

td(off)

td(on)

tr

tf

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