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VN2010L Datasheet(PDF) 4 Page - TEMIC Semiconductors |
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VN2010L Datasheet(HTML) 4 Page - TEMIC Semiconductors |
4 / 4 page VN2010L/BS107 Siliconix P-38283— Rev. B (08/15/94) 4 Typical Characteristics (25_C Unless Otherwise Noted) (Cont'd) Threshold Region Capacitance Normalized Effective Transient Thermal Impedance, JunctiontoAmbient (TO 226AA) Gate Charge Load Condition Effects on Switching t1 - Square Wave Pulse Duration (sec) ID - Drain Current (A) VDS - DraintoSource Voltage (V) VGS - GatetoSource Voltage (V) Qg - Total Gate Charge (pC) 10 1 0.01 0 0.4 0.1 0.8 1.2 1.6 2.0 VDS = 5 V TJ = 150°C -55°C 0°C 60 50 40 0 010 50 30 20 20 30 40 10 Coss Ciss Crss VGS = 0 V f = 1 MHz 15.0 12.5 10.0 0 0 250 1250 7.5 5.0 500 750 1000 2.5 I D = 0.1 A 160 V VDS = 100 V 0.01 0.1 1.0 100 10 1 50 20 5 2 VDD = 25 V RG = 25 W VGS = 0 to 10 V 10 K Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 1 0.01 0.1 0.01 0.1 1 100 10 1 K 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 Notes: PDM t2 td(off) td(on) tr tf |
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