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CC3235MODS Datasheet(PDF) 39 Page - Texas Instruments |
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CC3235MODS Datasheet(HTML) 39 Page - Texas Instruments |
39 / 98 page 39 CC3235MODS, CC3235MODSF www.ti.com SWRS224 – FEBRUARY 2019 Submit Documentation Feedback Product Folder Links: CC3235MODS CC3235MODSF Specifications Copyright © 2019, Texas Instruments Incorporated (1) Measurements taken at maximum TX power (2) The CC3235x system is a constant power-source system. The active current numbers scale based on the VBAT voltage supplied. (3) Typical numbers assume a VSWR of 1.5:1. (4) DTIM = 1 (5) LPDS current does not include the external serial flash. The LPDS number of reported is with retention of 256KB of MCU SRAM. The CC3235x device can be configured to retain 0KB, 64KB, 128KB, 192KB, or 256KB of SRAM in LPDS. Each 64-KB block of MCU retained SRAM increases LPDS current by 4 µA. (6) The complete calibration can take up to 17 mJ of energy from the battery over a period of 24 ms. Calibration is performed sparingly, typically when coming out of HIBERNATE and only if temperature has changed by more than 20°C. The calibration event can be controlled by a configuration file in the serial flash. Table 4-4. Current Consumption Summary (CC3235SF) 5 GHz RF Band TA = 25°C, VBAT = 3.6 V PARAMETER TEST CONDITIONS(1) (2) MIN TYP(3) MAX UNIT MCU ACTIVE NWP ACTIVE TX 6 OFDM 329 mA 54 OFDM 306 RX 54 OFDM 80 NWP idle connected(4) 25.2 MCU SLEEP NWP ACTIVE TX 6 OFDM 325 mA 54 OFDM 302 RX 54 OFDM 76 NWP idle connected(4) 21.2 MCU LPDS NWP active TX 6 OFDM 312 mA 54 OFDM 289 RX 54 OFDM 63 NWP LPDS(5) 120 µA at 64KB 135 µA at 256KB 135 µA NWP idle connected(4) 710 MCU SHUTDOWN MCU shutdown 1 µA MCU HIBERNATE MCU hibernate 5 µA Peak calibration current(6) VBAT = 3.6 V 290 mA VBAT = 3.3 V 310 VBAT = 2.7 V 310 VBAT = 2.3 V 333 |
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