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STS10PF30L Datasheet(PDF) 3 Page - STMicroelectronics |
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STS10PF30L Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 9 page 3/9 STS10PF30L Table 8: SWITCHING ON Table 9: SWITCHING OFF Table 10: SOURCE DRAIN DIODE (*) Pulse width b 300 µs, duty cycle 1.5 %. ( •) Pulse width limited by T JMAX Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V ID = 5 A RG =4.7 Ω VGS = 4.5 V (Resistive Load, Figure 15) 72 87 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 15V ID= 10A VGS=4.5V (see test circuit, Figure 16) 29 6.8 7.6 39 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 15 V ID = 5 A RG =4.7Ω, VGS = 4.5 V (Resistive Load, Figure 15) 89 27 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM Source-drain Current Source-drain Current (pulsed) 10 40 A A VSD (*) Forward On Voltage ISD = 10 A VGS = 0 1.2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10 A di/dt = 100A/µs VDD = 15 V Tj = 150°C (see test circuit, Figure 17) 48.5 68 2.8 ns nC A ELECTRICAL CHARACTERISTICS (continued) Figure 3: Safe Operating Area Figure 4: Thermal Impedance |
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