 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
MSK3018 Datasheet(PDF) 2 Page - M.S. Kennedy Corporation |
|
||||||||||||||||||||||||||||||
MSK3018 Datasheet(HTML) 2 Page - M.S. Kennedy Corporation |
|
|
2 / 5 page  VGS=0 ID=0.25mA (All Transistors) VDS=55V VGS=0V (Q2,Q4,Q6) VDS=-55V VGS=0V (Q1,Q3,Q5) VGS=±20V VDS=0 (All Transistors) VDS=VGS ID=250µA (Q2,Q4,Q6) VDS=VGS ID=250µA (Q1,Q3,Q5) VGS=10V ID=10A (Q2,Q4,Q6) VGS=-10V ID=-10A (Q1,Q3,Q5) VGS=10V ID=10A (Q2,Q4,Q6) VGS=10V ID=-10A (Q1,Q3,Q5) VDS=25V ID=10A (Q2,Q4,Q6) VDS=-25V ID=-10A (Q1,Q3,Q5) ID=30A VDS=44V VGS=10V VDD=28V ID=30A RG=2.5Ω RD=0.93Ω VGS=0V VDS=25V f=1MHz ID=-10A VDS=-44V VGS=-10V VDD=-28V ID=-10A RG=13Ω RD=2.6Ω VGS=0V VDS=-25V f=1MHz IS=30A VGS=0V (Q2,Q4,Q6) IS=-10A VGS=0V (Q1,Q3,Q5) IS=30A di/dt=100A/µS (Q2,Q4,Q6) IS=-10A di/dt=100A/µS (Q1,Q3,Q5) IS=30A di/dt=100A/µS (Q2,Q4,Q6) IS=-10A di/dt=100A/µS (Q1,Q3,Q5) 1 2 3 4 5 Drain-Source Leakage Current Gate-Source Threshold Voltage Drain-Source On Resistance Drain-Source On Resistance Forward Transconductance Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Drain-Source Breakdown Voltage Gate-Source Leakage Current N-Channel (Q2,Q4,Q6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance P-CHANNEL (Q1,Q3,Q5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BODY DIODE 570mJ 180mJ +175°C MAX -55°C to +150°C -55°C to +125°C 300°C MAX Single Pulse Avalanche Energy (Q2,Q4,Q6) (Q1,Q3,Q5) Junction Temperature Storage Temperature Case Operating Temperature Range Lead Temperature Range (10 Seconds) Drain to Source Voltage Drain to Gate Voltage (RGS=1MΩ) Gate to Source Voltage (Continuous) Continuous Current (N-Channel) (P-Channel) Pulsed Current (N-Channel) (P-Channel) Thermal Resistance (Junction to Case) (N-Channel FETs) (P-Channel FETs) ABSOLUTE MAXIMUM RATINGS VDSS VDGDR VGS ID IDM RTH-JC TJ TST TC TLD 55V MAX 55V MAX ±20V MAX 30A MAX 14A MAX 40A MAX 20A MAX 2°C/W 6°C/W Parameter Units MSK3018 Test Conditions V µA µA nA V V Ω Ω Ω Ω S S nC nC nC nS nS nS nS pF pF pF nC nC nC nS nS nS nS pF pF pF V V nS nS nC nC Min. 55 - - - 2.0 -2.0 - - - - 30 4.2 - - - - - - - - - - - - - - - - - - - - - - - - - - Typ. - - - - - - - - - - - - - - - 14 62 47 58 3400 830 240 - - - 13 55 130 41 620 280 140 1.3 -1.6 120 54 510 110 Max. - 25 -25 ±100 4.5 -4.5 0.04 0.16 0.013 0.10 - - 150 24 55 - - - - - - - 35 7.9 16 - - - - - - - - - 190 82 760 160 ELECTRICAL SPECIFICATIONS 2 1 3 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 NOTES: This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only. Resistance as seen at package pins. Resistance for die only; use for thermal calculations. TA=25°C unless otherwise specified. Test limits due to autotest fixturing constraints. 4 Rev. A 7/00 2 5 |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
