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MSK3018 Datasheet(PDF) 2 Page - M.S. Kennedy Corporation

Part No. MSK3018
Description  THREE PHASE BRIDGE MOSFET POWER MODULE
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Manufacturer  MSK [M.S. Kennedy Corporation]
Direct Link  http://www.mskennedy.com
Logo MSK - M.S. Kennedy Corporation

MSK3018 Datasheet(HTML) 2 Page - M.S. Kennedy Corporation

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VGS=0 ID=0.25mA (All Transistors)
VDS=55V VGS=0V (Q2,Q4,Q6)
VDS=-55V VGS=0V (Q1,Q3,Q5)
VGS=±20V VDS=0 (All Transistors)
VDS=VGS ID=250µA (Q2,Q4,Q6)
VDS=VGS ID=250µA (Q1,Q3,Q5)
VGS=10V ID=10A (Q2,Q4,Q6)
VGS=-10V ID=-10A (Q1,Q3,Q5)
VGS=10V ID=10A (Q2,Q4,Q6)
VGS=10V ID=-10A (Q1,Q3,Q5)
VDS=25V ID=10A (Q2,Q4,Q6)
VDS=-25V ID=-10A (Q1,Q3,Q5)
ID=30A
VDS=44V
VGS=10V
VDD=28V
ID=30A
RG=2.5Ω
RD=0.93Ω
VGS=0V
VDS=25V
f=1MHz
ID=-10A
VDS=-44V
VGS=-10V
VDD=-28V
ID=-10A
RG=13Ω
RD=2.6Ω
VGS=0V
VDS=-25V
f=1MHz
IS=30A VGS=0V (Q2,Q4,Q6)
IS=-10A VGS=0V (Q1,Q3,Q5)
IS=30A di/dt=100A/µS (Q2,Q4,Q6)
IS=-10A di/dt=100A/µS (Q1,Q3,Q5)
IS=30A di/dt=100A/µS (Q2,Q4,Q6)
IS=-10A di/dt=100A/µS (Q1,Q3,Q5)
1
2
3
4
5
Drain-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On Resistance
Drain-Source On Resistance
Forward Transconductance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
N-Channel (Q2,Q4,Q6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-CHANNEL (Q1,Q3,Q5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BODY DIODE
570mJ
180mJ
+175°C MAX
-55°C to +150°C
-55°C to +125°C
300°C MAX
Single Pulse Avalanche Energy
(Q2,Q4,Q6)
(Q1,Q3,Q5)
Junction Temperature
Storage Temperature
Case Operating Temperature Range
Lead Temperature Range
(10 Seconds)
Drain to Source Voltage
Drain to Gate Voltage
(RGS=1MΩ)
Gate to Source Voltage (Continuous)
Continuous Current (N-Channel)
(P-Channel)
Pulsed Current (N-Channel)
(P-Channel)
Thermal Resistance (Junction to Case)
(N-Channel FETs)
(P-Channel FETs)
ABSOLUTE MAXIMUM RATINGS
VDSS
VDGDR
VGS
ID
IDM
RTH-JC
TJ
TST
TC
TLD
55V MAX
55V MAX
±20V MAX
30A MAX
14A MAX
40A MAX
20A MAX
2°C/W
6°C/W
Parameter
Units
MSK3018
Test Conditions
V
µA
µA
nA
V
V
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
nS
nS
nC
nC
Min.
55
-
-
-
2.0
-2.0
-
-
-
-
30
4.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
14
62
47
58
3400
830
240
-
-
-
13
55
130
41
620
280
140
1.3
-1.6
120
54
510
110
Max.
-
25
-25
±100
4.5
-4.5
0.04
0.16
0.013
0.10
-
-
150
24
55
-
-
-
-
-
-
-
35
7.9
16
-
-
-
-
-
-
-
-
-
190
82
760
160
ELECTRICAL SPECIFICATIONS
2
1
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
NOTES:
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
TA=25°C unless otherwise specified.
Test limits due to autotest fixturing constraints.
4
Rev. A 7/00
2
5


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