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CY7C1049BV33L-12VC Datasheet(PDF) 5 Page - Cypress Semiconductor

Part # CY7C1049BV33L-12VC
Description  512K x 8 Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1049BV33L-12VC Datasheet(HTML) 5 Page - Cypress Semiconductor

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CY7C1049BV33
Document #: 38-05139 Rev. *A
Page 5 of 10
AC Switching Characteristics[4] Over the Operating Range (continued)
Parameter
Description
-20
-25
Unit
Min.
Max.
Min.
Max.
Read Cycle
tpower
VCC(typical) to the First Access
[6]
11
µs
tRC
Read Cycle Time
20
25
ns
tAA
Address to Data Valid
20
25
ns
tOHA
Data Hold from Address Change
3
3
ns
tACE
CE LOW to Data Valid
20
25
ns
tDOE
OE LOW to Data Valid
8
10
ns
tLZOE
OE LOW to Low Z
0
0
ns
tHZOE
OE HIGH to High Z[6, 7]
810
ns
tLZCE
CE LOW to Low Z[7]
33
ns
tHZCE
CE HIGH to High Z[6, 7]
810
ns
tPU
CE LOW to Power-Up
0
0
ns
tPD
CE HIGH to Power-Down
20
25
ns
Write Cycle[9]
tWC
Write Cycle Time
20
25
ns
tSCE
CE LOW to Write End
13
15
ns
tAW
Address Set-Up to Write End
13
15
ns
tHA
Address Hold from Write End
0
0
ns
tSA
Address Set-Up to Write Start
0
0
ns
tPWE
WE Pulse Width
13
15
ns
tSD
Data Set-Up to Write End
9
10
ns
tHD
Data Hold from Write End
0
0
ns
tLZWE
WE HIGH to Low Z[7]
33
ns
tHZWE
WE LOW to High Z[6, 7]
810
ns
Data Retention Characteristics Over the Operating Range (For L version only)
Parameter
Description
Conditions[10]
Min.
Max
Unit
VDR
VCC for Data Retention
2.0
V
ICCDR
Data Retention Current
VCC = VDR = 2.0V,
CE > VCC – 0.3V
VIN > VCC – 0.3V or VIN < 0.3V
330
µA
tCDR
[3]
Chip Deselect to Data Retention
Time
0ns
tR
[11]
Operation Recovery Time
tRC
ns
Notes:
10. No input may exceed VCC + 0.5V
11.
.tr < 3 ns for the -12 and -15 speeds. tr < 5 ns for the -20 ns and slower speeds.


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