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HY57V161610E Datasheet(PDF) 4 Page - Hynix Semiconductor

Part No. HY57V161610E
Description  2 Banks x 512K x 16 Bit Synchronous DRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY57V161610E Datasheet(HTML) 4 Page - Hynix Semiconductor

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HY57V161610E
Rev. 0.2 / Aug. 2003
4
ABSOLUTE MAXIMUM RATINGS
Note : Operation at above absolute maximum rating can adversely affect device reliability.
DC OPERATING CONDITION (TA=0°C to 70°C)
Note :
1.All voltages are referenced to VSS = 0V.
2.VDD(min) is 3.15V when HY57V161610ET-7 operates at CAS latency=2
3.VDD(min) of HY57V161610ET-5/55 is 3.15V
4.Vih(Max) : 4.6V AC pulse width with < 3ns of duration.
5.Vil(min) : -1.5V AC pulse width with < 3ns of duration.
AC OPERATING CONDITION (TA=0°C to 70°C, VDD=3.0V to 3.6V, VSS=0V)
Note :
1. Output load to measure access times is equivalent to two TTL gates and one capacitance(30pF).
For details, refer to AC/DC output load circuit.
2. VDD(min) is 3.15V when HY57V161610ET-7 operates at CAS latency=2 and tCK2=8.9ns
3. VDD(min) of HY57V161610ET-5/55 is 3.15V‘
Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
0 ~ 70
°C
Storage Temperature
TSTG
-55 ~ 125
°C
Voltage on Any Pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD relative to VSS
VDD
-1.0 ~ 4.6
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD
1W
Soldering Temperature·Time
TSOLDER
260·10
°C ·Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
VDD, VDDQ
3.0
3.3
3.6
V
1, 2, 3
Input high voltage
VIH
2.0
3.0
VDD + 0.3
V
1, 4
Input low voltage
VIL
-0.3
0
0.8
V
1, 5
Parameter
Symbol
Value
Unit
Note
AC input high / low level voltage
VIH / VIL
2.4/0.4
V
Input timing measurement reference level voltage
Vtrip
1.4
V
Input rise / fall time
tR / tF
1
ns
Output timing measurement reference level
Voutref
1.4
V
Output load capacitance for access time measurement
CL
30
pF
1


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