SI6926ADQ datasheet(4/5 Pages) VISHAY

Part #	SI6926ADQ

Description	Dual N-Channel 2.5-V G-S MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si6926ADQ

Vishay Siliconix

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Document Number: 72754

S-40230—Rev. A, 16-Feb-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

15

30

5

10

Single Pulse Power, Junction-to-Ambient

Time (sec)

20

25

10−3

10−2

1

10

600

10−1

10−4

100

−0.4

−0.3

−0.2

−0.1

−0.0

0.1

0.2

−50

−25

0

25

50

75

100

125

150

ID = 250 mA

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Threshold Voltage

TJ − Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 126_C/W

3. TJM − TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

1

600

10

10−1

10−3

100

10−2

Safe Operating Area, Junction-to-Case

VDS − Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25_C

Single Pulse

ID(on)

Limited

BVDSS Limited

IDM Limited

100 ms

dc

1 ms

10 ms

1 s

10 s

Limited

by rDS(on)

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