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HL6319G Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HL6319G Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 6 page  HL6319/20G 118 Absolute Maximum Ratings (T C = 25°C) Item Symbol Value Unit Optical output power P O 10 mW LD reverse voltage V R(LD) 2 V PD reverse voltage V R(PD) 30 V Operating temperature Topr –10 to +50 °C Storage temperature Tstg –40 to +85 °C Optical and Electrical Characteristics (T C = 25°C) Item Symbol Min Typ Max Unit Test Conditions Optical output power P O 10 — — mW Kink free Threshold current Ith 20 50 75 mA Operating current I OP — 70 95 mA P O = 10 mW Operating voltage V OP — — 2.7 V P O = 10 mW Slope efficiency ηs 0.3 0.5 0.7 mW/mA 6(mW)/(I(8mW)–I(2mW)) Lasing wavelength λp 625 635 640 nm P O = 10 mW Beam divergence (parallel) θ// 5 8 11 deg. P O = 10 mW Beam divergence (perpendicular) θ⊥ 25 31 37 deg. P O = 10 mW Monitor current Is 0.05 0.17 0.30 mA P O = 10 mW, VR(PD) = 5 V |
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