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SFH610A Datasheet(PDF) 2 Page - Vishay Siliconix |
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SFH610A Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 9 page 
SFH610A, SFH6106 www.vishay.com Vishay Semiconductors Rev. 2.5, 28-Mar-18 2 Document Number: 83666 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6V DC forward current IF 60 mA Surge forward current t ≤ 10 μs IFSM 2.5 A Power dissipation Pdiss 100 mW OUTPUT Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7V Collector current IC 50 mA tp ≤ 1.0 ms IC 100 mA Power dissipation Pdiss 150 mW COUPLER Storage temperature range Tstg -55 to +150 °C Ambient temperature range Tamb -55 to +100 °C Soldering temperature (1) max. 10 s, dip soldering distance to seating plane ≥ 1.5 mm Tsld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 60 mA VF - 1.25 1.65 V Reverse current VR = 6 V IR -0.01 10 μA Capacitance VR = 0 V, f = 1 MHz CO -13 - pF Thermal resistance Rthja - 750 - K/W OUTPUT Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE -5.2 - pF Thermal resistance Rthja - 500 - K/W Collector emitter leakage current VCE = 10 V SFH610A-1 ICEO - 2 50 nA SFH6106-1 ICEO - 2 50 nA SFH610A-2 ICEO - 2 50 nA SFH6106-2 ICEO - 2 50 nA SFH610A-3 ICEO - 5 100 nA SFH6106-3 ICEO - 5 100 nA SFH610A-4 ICEO - 5 100 nA SFH6106-4 ICEO - 5 100 nA SFH610A-5 ICEO - 5 100 nA SFH6106-5 ICEO - 5 100 nA COUPLER Collector emitter saturation voltage IF = 10 mA, IC = 2.5 mA VCEsat - 0.25 0.4 V Coupling capacitance f = 1 MHz CC -0.4 - pF |
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