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IC42S81600-6TG Datasheet(PDF) 9 Page - Integrated Circuit Solution Inc

Part # IC42S81600-6TG
Description  4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
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Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IC42S81600-6TG Datasheet(HTML) 9 Page - Integrated Circuit Solution Inc

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IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
Integrated Circuit Solution Inc.
9
DR023-0E 6/11/2004
AC ELECTRICAL CHARACTERISTICS
(At VDD = VDDQ = 3.3 ± 0.3V, VSS = VSSQ = 0V , unless otherwise noted)
-6
-7
-8
Symbol Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Units
tCK3
CLK Cycle Time
CL= 3
6
7.5
8
ns
tCK2
CL= 2
7.5
10
10
ns
tAC3
CLK to valid output delay(1)
CL= 3
5.4
5.4
6
ns
tAC2
CL= 2
5.4
6
6
ns
tCH
CLK high pulse width
2.5
2.5
3
ns
tCL
CLK low pulse width
2.5
2.5
3
ns
tCKE
CKE setup time
1.5
1.5
2
ns
tCKH
CKE hold time
0.8
0.8
1
ns
tAS
Address setup time
1.5
1.5
2
ns
tAH
Address hold time
0.8
0.8
1
ns
tCMS
Command setup time
1.5
1.5
2
ns
tCMH
Command hold time
0.8
0.8
1
ns
tDS
Data input setup time
1.5
1.5
2
ns
tDH
Data input hold time
0.8
0.8
1
ns
tOH3
Output data hold time(1)
CL= 3
2.7
2.7
3
ns
tOH2
CL= 2
2.7
3
3
ns
tLZ
CLK to output in low - Z
0—
0
0
ns
tHZ
CLK to output in H - Z
2.7
5.4
2.7
5.4
3
6
ns
tRC
ROW cycle time
60.0
67.5
70
ns
tRAS
ROW active time
42
100K
45
100K
50
100K
ns
tRCD
RAS to CAS delay
18
20
20
ns
tRP
Row precharge time
15
20
20
ns
tRRD
Row active to active delay
12
15
20
ns
tT
Transition time
110
1
10
1
10
ns
tRSC
Mode reg. set cycle
12
15
20
ns
tPDE
Power down exit setup time
6
7.5
10
ns
tSRX
Self refresh exit time
6
7.5
10
ns
tDPL
Data in to Precharge
12
15
16
ns
tDAL
Data in to Active/Refresh Delay Time
27
35
36
ns
tREF
Refresh Time
64
64
64
ms
Notes:
1. if clock rising time is longer than 1ns, (tr/2-0.5ns) should be added to the parameter.


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