IS62LV2568LL-85H datasheet(4/10 Pages) ISSI

Part #	IS62LV2568LL-85H

Description	256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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4 / 10 page

IS62LV2568LL

ISSI®

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

05/03/00

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-70

-85

Symbol Parameter

Test Conditions

Min.

Max.

Min.

Max.

Unit

ICC

Vcc Dynamic

VCC = Max., CE = VIL

Com.

—

30

—

25

mA

Operating

IOUT = 0 mA, f = fMAX

Ind.

—

35

—

30

Supply Current

ISB1

TTL Standby

VCC = Max.,

Com.

—

0.4

—

0.4

mA

Current

VIN = VIH or VIL,

Ind.

—

1.0

—

1.0

(TTL Inputs)

CE1

≥ VIH or CE2 ≤ VIL, f = 0

ISB2

CMOS Standby

VCC = Max., f = 0

Com.

—

5

—

5µA

Current

CE1

≥ VCC – 0.2V,

Ind.

—

5

—

5

(CMOS Inputs)

CE2

≤ 0.2V,

or VIN

≥ VCC – 0.2V, VIN ≤ 0.2V

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

Min.

Max.

Unit

VOH

Output HIGH Voltage

VCC = Min., IOH = –1.0 mA

2.0

—

V

VOL

Output LOW Voltage

VCC = Min., IOL = 2.1 mA

—

0.4

V

VIH

Input HIGH Voltage

2.2

VCC + 0.3

V

VIL

Input LOW Voltage(1)

–0.3

0.4

V

ILI

Input Leakage

GND

≤ VIN ≤ VCC

–11

µA

ILO

Output Leakage

GND

≤ VOUT ≤ VCC

–11

µA

Note:

1. VIL = –3.0V for pulse width less than 10 ns.

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