CY62146DV30
Document #: 38-05339 Rev. *A
Page 3 of 11
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground
Potential ......................................–0.3V to + VCC(MAX) + 0.3V
DC Voltage Applied to Outputs
in High-Z State[6, 7].........................–0.3V to VCC(MAX) + 0.3V
DC Input Voltage[6, 7] ..................... –0.3V to VCC(MAX) + 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Device
Range
Ambient Tem-
perature (TA)VCC[8]
CY62146DV30L Industrial –40°C to +85°C 2.20V to 3.60V
CY62146DV30LL
Electrical Characteristics Over the Operating Range
Parameter Description
Test Conditions
CY62146DV30-45
CY62146DV30-55
CY62146DV30-70
Unit
Min. Typ.[5]
Max.
Min. Typ.[5]
Max.
Min. Typ.[5] Max.
VOH
Output HIGH
Voltage
IOH = –0.1 mA VCC = 2.20V
2.0
2.0
2.0
V
IOH = –1.0 mA VCC = 2.70V
2.4
2.4
2.4
V
VOL
Output LOW
Voltage
IOL = 0.1 mA VCC = 2.20V
0.4
0.4
0.4
V
IOL = 2.1 mA VCC = 2.70V
0.4
0.4
0.4
V
VIH
Input HIGH
Voltage
VCC = 2.2V to 2.7V
1.8
VCC +
0.3V
1.8
VCC +
0.3V
1.8
VCC +
0.3V
V
VCC= 2.7V to 3.6V
2.2
VCC +
0.3V
2.2
VCC +
0.3V
2.2
VCC +
0.3V
V
VIL
Input LOW
Voltage
VCC = 2.2V to 2.7V
–0.3
0.6
–0.3
0.6
–0.3
0.6
V
VCC= 2.7V to 3.6V
–0.3
0.8
–0.3
0.8
–0.3
0.8
V
IIX
Input Leakage
Current
GND < VI < VCC
–1
+1
–1
+1
–1
+1
µA
IOZ
Output
Leakage
Current
GND < VO < VCC, Output
Disabled
–1
+1
–1
+1
–1
+1
µA
ICC
VCC
Operating
Supply
Current
f = fMAX =
1/tRC
VCC = VCCmax
IOUT = 0 mA
CMOS levels
10
20
8
15
8
15
mA
f = 1 MHz
1.5
3
1.5
3
1.5
3
mA
ISB1
Automatic
CE
Power-down
Current —
CMOS
Inputs
CE > VCC−0.2V,
VIN>VCC–0.2V, VIN<0.2V)
f = fMAX (Address and Data
Only),
f = 0 (OE, WE, BHE and
BLE), VCC = 3.60V
L2
12
2
12
2
12
µA
LL
8
8
8
ISB2
Automatic
CE
Power-down
Current —
CMOS Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN <
0.2V,
f = 0, VCC = 3.60V
L2
12
2
12
2
12
µA
LL
8
8
8
Notes:
6. VIL(min.) = –2.0V for pulse durations less than 20 ns.
7. VIH(max) = VCC+0.75V for pulse durations less than 20 ns.
8. Full device AC operation assumes a 100-
µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization.
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
