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CY62146DV30
Document #: 38-05339 Rev. *A
Page 4 of 11
Capacitance (for all packages)[9]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
10
pF
COUT
Output Capacitance
10
pF
Thermal Resistance[9]
Parameter
Description
Test Conditions
BGA
TSOP II
Unit
ΘJA
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 × 4.5 inch, four-layer
printed circuit board
72
75.13
°C/W
ΘJC
Thermal Resistance
(Junction to Case)
8.86
8.95
°C/W
AC Test Loads and Waveforms[10]
Parameters
2.50V
3.0V
Unit
R1
16667
1103
Ω
R2
15385
1554
Ω
RTH
8000
645
Ω
VTH
1.20
1.75
V
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min. Typ.[5]
Max.
Unit
VDR
VCC for Data Retention
1.5
V
ICCDR
Data Retention Current
VCC= 1.5V
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V
L9
µA
LL
6
tCDR[9]
Chip Deselect to Data Retention Time
0
ns
tR[11]
Operation Recovery Time
tRC
ns
VCC
VCC
OUTPUT
R2
50 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT
V
Equivalent to:
THÉVENIN EQUIVALENT
ALL INPUT PULSES
RTH
R1
Data Retention Waveform
Notes:
9. Tested initially and after any design or process changes that may affect these parameters.
10. Test condition for the 45 ns part is a load capacitance of 30 pF.
11. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 100 µs or stable at VCC(min.) > 100 µs.
VCC(min)
VCC(min)
tCDR
VDR > 1.5 V
DATA RETENTION MODE
tR
VCC
CE
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