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PDTA144EE Datasheet(PDF) 2 Page - NXP Semiconductors |
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PDTA144EE Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 14 page 2004 Aug 05 2 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 47 k Ω, R2 = 47 kΩ PDTA144E series FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. QUICK REFERENCE DATA DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). SYMBOL PARAMETER TYP. MAX. UNIT VCEO collector-emitter voltage −−50 V IO output current (DC) −−100 mA R1 bias resistor 47 − k Ω R2 bias resistor 47 − k Ω PRODUCT OVERVIEW Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. TYPE NUMBER PACKAGE MARKING CODE NPN COMPLEMENT PHILIPS EIAJ PDTA144EE SOT416 SC-75 07 PDTC144EE PDTA144EEF SOT490 SC-89 07 PDTC144EEF PDTA144EK SOT346 SC-59 07 PDTC144EK PDTA144EM SOT883 SC-101 DR PDTC144EM PDTA144ES SOT54 (TO-92) SC-43 TA144E PDTC144ES PDTA144ET SOT23 − *07(1) PDTC144ET PDTA144EU SOT323 SC-70 *07(1) PDTC144EU |
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