IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGP12N60U1

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

4

8

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

750

pF

C

oes

V

125

pF

C

res

30

pF

Q

g

50

70

nC

Q

ge

I

15

25

nC

Q

gc

25

45

nC

t

d(on)

100

ns

t

ri

200

ns

t

d(off)

500

700

ns

t

fi

300

500

ns

E

off

1.2

2.0

mJ

t

d(on)

100

ns

t

ri

200

ns

E

on

1mJ

t

d(off)

600

800

ns

t

fi

400

700

ns

E

off

2mJ

R

thJC

1.25 K/W

R

thCK

0.25

K/W

Reverse Diode (FRED)

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

F

I

1.75

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

I

RM

I

2.5

A

t

rr

V

T

150

ns

I

T

50

ns

R

thJC

2.5 K/W

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

12.70

14.93

0.500

0.580

B

14.23

16.50

0.560

0.650

C

9.66

10.66

0.380

0.420

D

3.54

4.08

0.139

0.161

E

5.85

6.85

0.230

0.270

F

2.29

2.79

0.090

0.110

G

1.15

1.77

0.045

0.070

H

2.79

6.35

0.110

0.250

J

0.64

0.89

0.025

0.035

K

2.54

BSC

0.100

BSC

M

4.32

4.82

0.170

0.190

N

0.64

1.39

0.025

0.055

Q

0.51

0.76

0.020

0.030

R

2.04

2.49

0.080

0.115

TO-220 AB Outline

Inductive load, T

°°°°C

I

V

Remarks: Switching times may increase

for V

increased R

G

Inductive load, T

°°°°C

I

V

Remarks: Switching times may increase

for V

increased R

G