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ZXSC410E6TA Datasheet(PDF) 3 Page - Diodes Incorporated

Part # ZXSC410E6TA
Description  DC-DC BOOST SWITCHING CONTROLLERS
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXSC410E6TA Datasheet(HTML) 3 Page - Diodes Incorporated

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ZXSC410/ZXSC420/ZXSC440
Document number: DS33618 Rev. 6 - 2
3 of 17
www.diodes.com
August 2015
© Diodes Incorporated
ZXSC410/ZXSC420/ZXSC440
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Parameter
Rating
Unit
VCC
-0.3 to +10
V
Drive
-0.3 to VCC +0.3
V
EOR
-0.3 to VCC +0.3
V
STDN
-0.3 to The lower of (+5.0) or (VCC +0.3)
V
VFB, Sense
-0.3 to The lower of (+5.0) or (VCC +0.3)
V
Operating Temperature
-40 to +85
°C
Storage Temperature
-55 to +120
°C
Power Dissipation @ +25°C
450
mW
Caution:
Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may
be affected by exposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when
handling and transporting these devices.
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)
Symbol
Parameter
Min
Max
Unit
VCC
VCC Range
1.8
8
V
TA
Ambient Temperature Range
-40
+85
°C
VIH
Shutdown Threshold
1.5
VCC
V
VIL
Shutdown Threshold
0
0.55
V
Electrical Characteristics (VCC = 3V, @TA = +40°C to +85°C, unless otherwise specified.)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IQ (Note 4)
Quiescent Current
VCC = 8V
-
-
220
µA
ISTDN
Shutdown Current
-
-
4.5
-
µA
EFF (Note 5)
Efficiency
50mA > IOUT > 300mA
-
85
-
%
ACCREF
Reference Tolerance
1.8V < VCC < 8V
-3.0
-
+3.0
%
TCOREF
Reference Temp Co.
-
-
0.005
-
%/°C
TDRV
Discharge Pulse Width
1.8V < VCC < 8V
-
1.7
-
µs
FOSC
Operating Frequency
-
-
-
200
kHz
Input Parameters
VSENSE
Sense Voltage (Note 5)
-
22
28
34
mV
ISENSE
Sense Input Current
VFB = 0V; VSENSE = 0V
-1
-7
-15
µA
VFB
Feedback Voltage
TA = +25°C
291
300
309
mV
IFB (Note 6)
Feedback Input Current
VFB = 0V; VSENSE = 0V
-1.2
-
-4.5
µA
dVLN
Line Voltage Regulation
-
-
0.5
-
%/V
Output Parameters
IOUT (Note 7)
Output Current
VIN > 2V, VOUT = VIN
300
-
-
mA
IDRIVE
Transistor Drive Current
VDRIVE = 0.7V
2
3.4
5
mA
VDRIVE
Transistor Voltage Drive
1.8V < VCC < 8V
0
-
VCC -0.4
V
CDRIVE
MOSFET Gate Drive cpbty
-
-
300
-
pF
VOHEOR
EOR Flag Output High
IEOR = -300nA
2.5
-
VCC
V
VOLEOR
EOR Flag Output Low
IEOR = 1mA
0
-
1.15
V
TEOR
EOR Delay Time
TA = +25°C
70
195
250
µs
dILD
Load Current Regulation
-
-
-
0.01
%/mA
Notes:
4. Excluding gate/base drive current.
5. Effective sense voltage observed when switching at approximately 100kHz. The internal comparator propagation delay of approximately 1µs causes an
increase in the effective sense voltage over a DC measurement of the sense voltage.
6. IFB is typically half of these values at 3V.
7. System not device specification, including recommended transistors.


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