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ZX5T851A Datasheet(PDF) 4 Page - Zetex Semiconductors

Part No. ZX5T851A
Description  60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZX5T851A Datasheet(HTML) 4 Page - Zetex Semiconductors

   
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ZX5T851A
SEMICO NDUC TORS
ISSUE 1 - NOVEMBER 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BVCBO
150
190
V
IC=100 A
Collector-emitter breakdown voltage
BVCER
150
190
V
IC=1 A, RB 1k
Collector-emitter breakdown voltage
BVCEO
60
80
V
IC=10mA*
Emitter-base breakdown voltage
BVEBO
78.1
V
IE=100 A
Collector cut-off current
ICBO
20
0.5
nA
A
VCB=120V
V
CB=120V, Tamb=100 C
Collector cut-off current
ICER
R
1k
20
0.5
nA
A
VCB=120V
V
CB=120V, Tamb=100 C
Emitter cut-off current
IEBO
10
nA
VEB=6V
Collector-emitter saturation voltage
VCE(SAT)
18
40
45
95
170
30
55
65
130
210
mV
mV
mV
mV
mV
IC=100mA, IB=5mA*
I
C=1A, IB=100mA*
I
C=1A, IB=50mA*
I
C=2A, IB=50mA*
I
C=5A, IB=200mA*
Base-emitter saturation voltage
VBE(SAT)
950
1050
mV
IC=4A, IB=200mA*
Base-emitter turn-on voltage
VBE(ON)
840
950
mV
IC=4A, VCE=1V*
Static forward current transfer ratio
hFE
100
100
55
20
200
200
105
40
300
IC=10mA, VCE=1V*
I
C=2A, VCE=1V*
I
C=5A, VCE=1V*
I
C=10A, VCE=1V*
Transition frequency
fT
130
MHz IC=100mA, VCE=10V
f=50MHz
Output capacitance
COBO
31
pF
VCB=10V, f=1MHz*
Switching times
tON
tOFF
42
760
ns
ns
IC=1A, VCC=10V,
IB1=IB2=100mA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.


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