SUB65P04-15 datasheet(2/5 Pages) VISHAY | P-Channel 40-V (D-S) 175C MOSFET

Part #	SUB65P04-15

Description	P-Channel 40-V (D-S) 175C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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2 / 5 page

SUP/SUB65P04-15

Vishay Siliconix

New Product

www.vishay.com

S FaxBack 408-970-5600

2-2

Document Number: 71174

S-00831—Rev. A, 01-May-00

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = –250 mA

–40

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–1

–3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

ZG

V l

D i C

I

VDS = –40 V, VGS = 0 V

–1

A

Zero Gate Voltage Drain Current

IDSS

VDS = –40 V, VGS = 0 V, TJ = 125_C

–50

mA

VDS = –40 V, VGS = 0 V, TJ = 175_C

–250

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –10 V

–120

A

DiS

OS

R

i

a

VGS = –10 V, ID = –30 A

0.012

0.015

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –10 V, ID = –30 A, TJ = 125_C

0.024

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –10 V, ID = –30 A, TJ = 175_C

0.030

VGS = –4.5 V, ID = –20 A

0.018

0.023

W

Forward Transconductancea

gfs

VDS = –15 V, ID = –50 A

20

S

Dynamicb

Input Capacitance

Ciss

V

0 V V

25 V f

1 MH

5400

F

Output Capacitance

Coss

VGS = 0 V, VDS = –25 V, f = 1 MHz

640

pF

Reversen Transfer Capacitance

Crss

300

Total Gate Chargec

Qg

V20 V V

10 V I

65 A

85

130

C

Gate-Source Chargec

Qgs

VDS = –20 V, VGS = –10 V, ID = –65 A

25

nC

Gate-Drain Chargec

Qgd

15

Turn-On Delay Timec

td(on)

15

25

Rise Timec

tr

VDD = –20 V, RL = 0.3 W

380

580

ns

Turn-Off Delay Timec

td(off)

DD

,

L

ID ] –65 A, VGEN = –10 V, RG = 2.5 W

75

115

ns

Fall Timec

tf

140

210

Source-Drain Diode Ratings and Characteristics (TC = 25_C)b

Continuous Current

Is

–65

A

Pulsed Current

ISM

–240

A

Forward Voltagea

VSD

IF = –65 A, VGS = 0 V

–1.2

–1.5

V

Reverse Recovery Time

trr

I

65 A di/d

100 A/

40

80

ns

Peak Reverse Recovery Current

IRM(REC)

IF = –65 A, di/dt = 100 A/ms

2.0

4

A

Reverse Recovery Charge

Qrr

0.04

0.1

mC

Notes:

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

c.

Independent of operating temperature.

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