Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

SUB65P04-15 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SUB65P04-15
Description  P-Channel 40-V (D-S) 175C MOSFET
Download  5 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo 

SUB65P04-15 Datasheet(HTML) 2 Page - Vishay Siliconix

   
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
SUP/SUB65P04-15
Vishay Siliconix
New Product
www.vishay.com
S FaxBack 408-970-5600
2-2
Document Number: 71174
S-00831—Rev. A, 01-May-00
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = –250 mA
–40
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
–1
–3
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
ZG
V l
D i C
I
VDS = –40 V, VGS = 0 V
–1
A
Zero Gate Voltage Drain Current
IDSS
VDS = –40 V, VGS = 0 V, TJ = 125_C
–50
mA
VDS = –40 V, VGS = 0 V, TJ = 175_C
–250
On-State Drain Currenta
ID(on)
VDS = –5 V, VGS = –10 V
–120
A
DiS
OS
R
i
a
VGS = –10 V, ID = –30 A
0.012
0.015
W
Drain-Source On-State Resistancea
rDS(on)
VGS = –10 V, ID = –30 A, TJ = 125_C
0.024
W
Drain-Source On-State Resistancea
rDS(on)
VGS = –10 V, ID = –30 A, TJ = 175_C
0.030
VGS = –4.5 V, ID = –20 A
0.018
0.023
W
Forward Transconductancea
gfs
VDS = –15 V, ID = –50 A
20
S
Dynamicb
Input Capacitance
Ciss
V
0 V V
25 V f
1 MH
5400
F
Output Capacitance
Coss
VGS = 0 V, VDS = –25 V, f = 1 MHz
640
pF
Reversen Transfer Capacitance
Crss
300
Total Gate Chargec
Qg
V20 V V
10 V I
65 A
85
130
C
Gate-Source Chargec
Qgs
VDS = –20 V, VGS = –10 V, ID = –65 A
25
nC
Gate-Drain Chargec
Qgd
15
Turn-On Delay Timec
td(on)
15
25
Rise Timec
tr
VDD = –20 V, RL = 0.3 W
380
580
ns
Turn-Off Delay Timec
td(off)
DD
,
L
ID ] –65 A, VGEN = –10 V, RG = 2.5 W
75
115
ns
Fall Timec
tf
140
210
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Is
–65
A
Pulsed Current
ISM
–240
A
Forward Voltagea
VSD
IF = –65 A, VGS = 0 V
–1.2
–1.5
V
Reverse Recovery Time
trr
I
65 A di/d
100 A/
40
80
ns
Peak Reverse Recovery Current
IRM(REC)
IF = –65 A, di/dt = 100 A/ms
2.0
4
A
Reverse Recovery Charge
Qrr
0.04
0.1
mC
Notes:
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.


Html Pages

1  2  3  4  5 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
SUD50P04-09LP-Channel 40-V D-S 175C MOSFET 1 2 3 4 Vishay Siliconix
SUD50P04-15P-Channel 40-V D-S 175C MOSFET 1 2 3 4 Vishay Siliconix
SI7463DPP-Channel 40-V D-S MOSFET 1 2 3 4 5 Fairchild Semiconductor
SI4569DYN- and P-Channel 40-V D-S MOSFET 1 2 3 4 Vaishali Semiconductor
SI9407AEYP-Channel 60-V D-S 175C MOSFET 1 2 3 4 Vishay Siliconix
SUD50P04-13LP-Channel 40-V D-S 175C MOSFET 1 2 3 4 5 Vishay Siliconix
SUM110P04-05P-Channel 40-V D-S MOSFET 1 2 3 Vishay Siliconix
SUD40N04-10AN-Channel 40-V D-S 175C MOSFET 1 2 3 4 Vishay Siliconix
SI4401DYP-Channel 40-V D-S MOSFET 1 2 3 4 Vishay Siliconix
SUB65P06-20P-Channel 60-V D-S 175C MOSFET 1 2 3 4 Vishay Siliconix

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn