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SUB65P04-15 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SUB65P04-15 Datasheet(HTML) 1 Page - Vishay Siliconix |
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SUP/SUB65P04-15 Vishay Siliconix New Product Document Number: 71174 S-00831—Rev. A, 01-May-00 www.vishay.com S FaxBack 408-970-5600 2-1 P-Channel 40-V (D-S) 175 _C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) –40 0.015 @ VGS = –10 V –65 –40 0.023 @ VGS = –4.5 V –50 SUP65P04-15 SUB65P04-15 DRAIN connected to TAB S G D P-Channel MOSFET TO-220AB Top View GD S TO-263 S G Top View D ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS –40 Gate-Source Voltage VGS "20 V Continuous Drain Current (T 175 _C) TC = 25_C ID –65 A (TJ = 175_C) TC = 125_C ID –37 A Pulsed Drain Current IDM –240 A Avalanche Current IAR –60 Repetitive Avalanche Energya L = 0.1 mH EAR 180 mJ Power Dissipation TC = 25_C (TO-220AB and TO-263) PD 120c W Power Dissipation TA = 25_C (TO-263)b PD 3.75 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient PCB Mount (TO-263)b RthJA 40 _C/W Junction-to-Ambient Free Air (TO-220AB) RthJA 62.5 _C/W Junction-to-Case RthJC 1.25 Notes: a. Duty cycle v 1%. b. When mounted on 1” square PCB (FR-4 material). c. See SOA curve for voltage derating. |
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