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SUB65P04-15 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SUB65P04-15
Description  P-Channel 40-V (D-S) 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUB65P04-15 Datasheet(HTML) 1 Page - Vishay Siliconix

   
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SUP/SUB65P04-15
Vishay Siliconix
New Product
Document Number: 71174
S-00831—Rev. A, 01-May-00
www.vishay.com
S FaxBack 408-970-5600
2-1
P-Channel 40-V (D-S) 175
_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
–40
0.015 @ VGS = –10 V
–65
–40
0.023 @ VGS = –4.5 V
–50
SUP65P04-15
SUB65P04-15
DRAIN connected to TAB
S
G
D
P-Channel MOSFET
TO-220AB
Top View
GD S
TO-263
S
G
Top View
D
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
–40
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current
(T
175
_C)
TC = 25_C
ID
–65
A
(TJ = 175_C)
TC = 125_C
ID
–37
A
Pulsed Drain Current
IDM
–240
A
Avalanche Current
IAR
–60
Repetitive Avalanche Energya
L = 0.1 mH
EAR
180
mJ
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
PD
120c
W
Power Dissipation
TA = 25_C (TO-263)b
PD
3.75
W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount (TO-263)b
RthJA
40
_C/W
Junction-to-Ambient
Free Air (TO-220AB)
RthJA
62.5
_C/W
Junction-to-Case
RthJC
1.25
Notes:
a.
Duty cycle
v 1%.
b.
When mounted on 1” square PCB (FR-4 material).
c.
See SOA curve for voltage derating.


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