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SI7943DP Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7943DP Datasheet(HTML) 2 Page - Vishay Siliconix |
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SPICE Device Model Si7943DP Vishay Siliconix www.vishay.com Document Number: 70699 2 31-May-04 SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 1.1 V On-State Drain Current a ID(on) VDS = −5 V, VGS = −10 V 235 A VGS = −10 V, ID = −9.4 A 0.020 0.020 Drain-Source On-State Resistance a rDS(on) VGS = −4.5 V, ID = −8.6 A 0.024 0.024 Ω VGS = −2.5 V, ID = −3 A 0.036 0.037 Forward Transconductance a gfs VDS = −15 V, ID = −9.4 A 23 15 S Diode Forward Voltage a VSD IS = −2.9 A, VGS = 0 V −0.81 −0.80 V Dynamic b Total Gate Charge Qg 25 23.5 Gate-Source Charge Qgs 8.5 8.5 Gate-Drain Charge Qgd VDS = −15 V, VGS = −4.5 V, ID = −9.4 A 5 5 nC Turn-On Delay Time td(on) 17 18 Rise Time tr 22 40 Turn-Off Delay Time td(off) 53 100 Fall Time tf VDD = −15 V, RL = 15 Ω ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω 73 60 Source-Drain Reverse Recovery Time trr IF = −2.9 A, di/dt = 100 A/µs 47 50 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
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