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SI7943DP Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI7943DP
Description  Dual P-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7943DP Datasheet(HTML) 2 Page - Vishay Siliconix

  SI7943DP Datasheet HTML 1Page - Vishay Siliconix SI7943DP Datasheet HTML 2Page - Vishay Siliconix SI7943DP Datasheet HTML 3Page - Vishay Siliconix  
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SPICE Device Model Si7943DP
Vishay Siliconix
www.vishay.com
Document Number: 70699
2
31-May-04
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 µA
1.1
V
On-State Drain Current
a
ID(on)
VDS = −5 V, VGS = −10 V
235
A
VGS = −10 V, ID = −9.4 A
0.020
0.020
Drain-Source On-State Resistance
a
rDS(on)
VGS = −4.5 V, ID = −8.6 A
0.024
0.024
VGS = −2.5 V, ID = −3 A
0.036
0.037
Forward Transconductance
a
gfs
VDS = −15 V, ID = −9.4 A
23
15
S
Diode Forward Voltage
a
VSD
IS = −2.9 A, VGS = 0 V
−0.81
−0.80
V
Dynamic
b
Total Gate Charge
Qg
25
23.5
Gate-Source Charge
Qgs
8.5
8.5
Gate-Drain Charge
Qgd
VDS = −15 V, VGS = −4.5 V, ID = −9.4 A
5
5
nC
Turn-On Delay Time
td(on)
17
18
Rise Time
tr
22
40
Turn-Off Delay Time
td(off)
53
100
Fall Time
tf
VDD = −15 V, RL = 15 Ω
ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω
73
60
Source-Drain Reverse Recovery Time
trr
IF = −2.9 A, di/dt = 100 A/µs
47
50
ns
Notes
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.


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