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S93WD663S-B Datasheet(PDF) 3 Page - Summit Microelectronics, Inc. |
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S93WD663S-B Datasheet(HTML) 3 Page - Summit Microelectronics, Inc. |
3 / 14 page 3 S93WD662/S93WD663 2013 2.1 8/2/00 SK 2013 ILL 3 1.0 DI CS DO t DIS t PD0, t PD1 tCSMIN tCSS tDIS tDIH tSKHI t CSH VALID VALID DATA V ALID t SKLOW The ready/busy status can be determined after the start of a write operation by selecting the device (CS high) and polling the DO pin; DO low indicates that the write operation is not completed, while DO high indicates that the device is ready for the next instruction. See the Applications Aid section for detailed use of the ready busy status. The format for all instructions is: one start bit; two op code bits and either eight (x16) or nine (x8) address or instruction bits. Read Upon receiving a READ command and an address (clocked into the DI pin), the DO pin of the S93WD662/ WD663 will come out of the high impedance state and, will first output an initial dummy zero bit, then begin shifting out the data addressed (MSB first). The output data bits will toggle on the rising edge of the SK clock and are stable after the specified time delay (tPD0 or tPD1). Write After receiving a WRITE command, address and the data, the CS (Chip Select) pin must be deselected for a minimum of 250ns (tCSMIN). The falling edge of CS will start automatic erase and write cycle to the memory location specified in the instruction. The ready/busy status of the S93WD662/WD663 can be determined by selecting the device and polling the DO pin. Erase Upon receiving an ERASE command and address, the CS (Chip Select) pin must be deselected for a minimum of 250ns (tCSMIN). The falling edge of CS will start the auto erase cycle of the selected memory location. The ready/busy status of the S93WD662/WD663 can be Figure 1. Sychronous Data Timing Figure 2. Read Instruction Timing SK 2013 ILL4 1.0 CS DI DO tCS STANDBY tHZ HIGH-Z HIGH-Z 11 0 AN AN–1 A0 0 DN DN–1 D1 D0 tPD0 |
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