2003 May 19

6

Philips Semiconductors

Product specification

Triple buffer gate

74HC3G34; 74HCT3G34

DC CHARACTERISTICS

Type 74HC3G34

At recommended operating conditions; voltages are referenced to GND (ground=0V).

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

OTHER

HIGH-level input voltage

2.0

1.5

1.2

−

V

4.5

3.15

2.4

−

V

6.0

4.2

3.2

−

V

LOW-level input voltage

2.0

−

0.8

0.5

V

4.5

−

2.1

1.35

V

6.0

−

2.8

1.8

V

HIGH-level output voltage

2.0

1.9

2.0

−

V

4.5

4.4

4.5

−

V

6.0

5.9

6.0

−

V

4.5

4.13

4.32

−

V

6.0

5.63

5.81

−

V

LOW-level output voltage

2.0

−

0

0.1

V

4.5

−

0

0.1

V

6.0

−

0

0.1

V

4.5

−

0.15

0.33

V

6.0

−

0.16

0.33

V

input leakage current

6.0

−−±1.0

µA

quiescent supply current

6.0

−−

10

µA