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KFM1216Q2M-DEB Datasheet(PDF) 8 Page - Samsung semiconductor |
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KFM1216Q2M-DEB Datasheet(HTML) 8 Page - Samsung semiconductor |
8 / 88 page MuxOneNAND512(KFM1216Q2M) FLASH MEMORY 8 1. FEATURES • Design Technology: 0.12µm • Voltage Supply - 1.8V device(KFM1216Q2M) : 1.7V~1.95V • Organization - Host Interface:16bit • Internal BufferRAM(5K Bytes) - 1KB for BootRAM, 4KB for DataRAM • NAND Array - Page Size : (2K+64)bytes - Block Size : (128K+4K)bytes ♦ Architecture • Host Interface type - Synchronous Burst Read : Clock Frequency: up to 54MHz(1.8V device) : Linear Burst - 4 , 8 , 16 words with wrap-around : Continuous Sequential Burst(1K words) - Asynchronous Random Read : Access time of 76ns - Asynchronous Random Write • Programmable Read latency • Multiple Sector Read - Read multiple sectors by Sector Count Register(up to 4 sectors) • Reset Mode - Cold Reset / Warm Reset / Hot Reset / NAND Flash Reset • Power dissipation (typical values) - Standby current : 10uA - Asynchronous Read current : 8mA - Synchronous Burst Read current(54MHz) : 12mA - Load current : 20mA - Program current: 20mA - Erase current: 15mA • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years ♦ Performance • Voltage detector generating internal reset signal from Vcc • Hardware reset input (RP) • Data Protection - Write Protection mode for BootRAM - Write Protection mode for NAND Flash Array - Write protection during power-up - Write protection during power-down • User-controlled One Time Programmable(OTP) area • Internal 2bit EDC / 1bit ECC • Internal Bootloader supports Booting Solution in system ♦ Hardware Features • Handshaking Feature - INT pin: Indicates Ready / Busy of MuxOneNAND - Polling method: Provides a software method of detecting the Ready / Busy status of MuxOneNAND • Detailed chip information by ID register ♦ Software Features • Package - 48ball, 12mm x 9.5mm x max 1.0mmt , 0.5mm ball pitch FBGA ♦ Packaging |
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Similar Description - KFM1216Q2M-DEB |
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