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MIG20J501L Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. MIG20J501L
Description  MIG20J501L
Download  20 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MIG20J501L Datasheet(HTML) 3 Page - Toshiba Semiconductor

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MIG20J501L
2001-05-07
3
Maximum Ratings (Unless otherwise specified, Tj
==== 25°C)
Inverter
Item
Symbol
Test Condition
Rating
Unit
Supply Voltage
VCC
P-N
450
V
Supply Voltage (Surge)
VCC (surge)
P-N
500
V
Collector Emitter Voltage
VCES
¾
600
V
Collector Current
±IC
Tc
= 25°C
20
A
Collector Current (Peak)
±ICP
Tc
= 25°C
40
A
Collector Power Dissipation
PC
Tc
= 25°C
50
W
Junction Temperature
Tj
¾
150
°C
Control (protection)
Item
Symbol
Test Condition
Rating
Unit
Supply Voltage
VD
VCC (U), (V), (W) - COM,
VCC (L) - GND
20
V
Supply Voltage
VDB
C (U), (V), (W) - CE (U), (V), (W)
20
V
Input Voltage
VIN
IN (U), (V), (W) - COM,
IN (X), (Y), (Z) - GND
-0.5 to VD + 0.5
V
Fault Output Voltage
VFO
VFO
- GND
-0.5 to VD + 0.5
V
Fault Output Current
IFO
Sink current rating of VFO
10
mA
Overcurrent Protection
Set-up Terminal
Iroc
roc
- GND
3
mA
General
Item
Symbol
Test Condition
Rating
Unit
Power Supply Voltage
Self-protection Range (Short)
VCC (PROT)
VD = 13.5 V to 16.5 V
Inverter: Tj = 125°C
Non-Repetitive
400
V
Operating Module Frame
Temperature
Tc
¾
-20 to +100
°C
Storage Temperature
Tstg
¾
-40 to +125
°C
Isolation Voltage
VISO
Sine wave 60 Hz, AC 1 minute,
Fin-terminal
2500
Vrms
Thermal resistance
Item
Symbol
Test Condition
Min
Typ.
Max
Unit
Rth (j-c)
Inverter IGBT
¾
¾
2.5
Junction to Case Thermal Resistance
Rth (j-c)
Inverter FRD
¾
¾
4.5
Case to Fin Thermal Resistance
Rth (c-f)
Case-Fin (coating grease)
¾
¾
0.4
°C/W


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