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SUM50N06-16L Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SUM50N06-16L
Description  N-Channel 60-V (D-S), 175C MOSFET, Logic Level
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUM50N06-16L Datasheet(HTML) 2 Page - Vishay Siliconix

   
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SUM50N06-16L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72048
S-22124—Rev. A, 25-Nov-02
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, IDS = 250 mA
1.0
2.0
3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 60 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V, TJ = 125_C
50
mA
g
DSS
VDS = 60 V, VGS = 0 V, TJ = 175_C
150
m
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = 10 V
50
A
VGS = 10 V, ID = 20 A
0.013
0.016
Drain Source On State Resistancea
rDS( )
VGS = 10 V, ID = 20 A, TJ = 125_C
0.028
W
Drain-Source On-State Resistancea
rDS(on)
VGS = 10 V, ID = 20 A, TJ = 175_C
0.036
W
VGS = 4.5 V, ID = 20 A
0.017
0.022
Forward Transconductancea
gfs
VDS = 15 V, ID = 20 A
50
S
Dynamicb
Input Capacitance
Ciss
1325
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
265
pF
Reversen Transfer Capacitance
Crss
115
Total Gate Chargec
Qg
25
40
Gate-Source Chargec
Qgs
VDS = 30 V, VGS = 10 V, ID = 50 A
5.5
nC
Gate-Drain Chargec
Qgd
DS
, GS
, D
6.5
Turn-On Delay Timec
td(on)
10
20
Rise Timec
tr
VDD = 30 V, RL = 0.8 W
9
20
ns
Turn-Off Delay Timec
td(off)
VDD = 30 V, RL = 0.8 W
ID ] 50 A, VGEN = 10 V, RG = 2.5 W
25
50
ns
Fall Timec
tf
D
GEN
G
7
15
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Is
50
A
Pulsed Current
ISM
100
A
Forward Voltagea
VSD
IF = 50 A, VGS = 0 V
1.0
1.5
V
Reverse Recovery Time
trr
35
70
ns
Peak Reverse Recovery Current
IRM(REC)
IF = 50 A, di/dt = 100 A/ms
2.3
4
A
Reverse Recovery Charge
Qrr
F
,
m
0.04
0.14
mC
Notes:
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.


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